| 001685 (1999) |
| Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates |
| 001B50 (1997-01-15) |
| Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells |
| 001C84 (1997) |
| Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions |
| 001C94 (1997) |
| Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties |
| 001516 (1999-11-15) |
| Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exciton resonance region |
| 001919 (1998) |
| The determination of e14 in (111)B-grown (In, Ga)As/GaAs strained layers |
| 001A17 (1998) |
| Effect of indium surface segregation on excitonic properties in (111)B-grown (In, Ga)As/GaAs multiple quantum wells |
| 002050 (1995-05-15) |
| Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy |
| 002304 (1994-03-21) |
| Monolayer thickness control of InxGa1-xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy |
| 002414 (1994) |
| Epitaxial growth and kinetic study of mismatched (Ga,In)As/InP layers grown by hydride vapour phase epitaxy |
| 002583 (1993) |
| Photoluminescence studies in strained InAs/InP quantum wells grown by hybride vapour-phase epitaxy |
| 002646 (1993) |
| Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells |
| 000912 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000A41 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000B15 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000B71 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000F53 (2002) |
| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| 001138 (2001) |
| Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001201 (2001) |
| Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE |
| 001283 (2001) |
| Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| 001310 (2000-10-15) |
| Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001718 (1999) |
| Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well |
| 001738 (1999) |
| Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE |
| 001920 (1998) |
| Temperature dependence of quantized states in (111)B-grown (In, Ga)As/GaAs multiple quantum well p-i-n diodes |
| 001955 (1998) |
| Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy |
| 001A48 (1997-12-15) |
| Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells |
| 001C29 (1997) |
| Optical investigation of piezoelectric field effects on excitonic properties in (111)N-grown (In, Ga)As/GaAs quantum wells |
| 002287 (1994-05-16) |
| Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy |
| 002671 (1993) |
| First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy |
| 002994 (1991) |
| Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy |
| 000758 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000782 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000895 (2005) |
| Resonant Raman spectroscopy on InN |
| 000913 (2005) |
| Optical properties of InN related to surface plasmons |
| 001108 (2001-04-01) |
| Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure |
| 002D68 (1988) |
| Near-infrared thermally detected absorption spectroscopy and photo-acoustics in III-V materials at liquid helium temperatures |
| 001324 (2000-08-28) |
| InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K |
| 002012 (1995-10) |
| Propriétés optiques de puits quantiques InGaAs/GaAs élaborés sous jets moléculaires |
| 002248 (1994-10) |
| Etude des propriétés électroniques de puits quantiques contraints InAs/InP et InAs/GaAs par spectroscopie optique |
