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Serveur d'exploration sur l'Indium

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Le cluster B. Aspar - S. Pocas

Terms

7B. Aspar
7S. Pocas
10E. Jalaguier
51P. Viktorovitch
31X. Letartre
25C. Seassal
12P. Rojo Romeo
26J. L. Leclercq

Associations

Freq.WeightAssociation
71.000B. Aspar - S. Pocas
70.837E. Jalaguier - S. Pocas
70.837B. Aspar - E. Jalaguier
50.456E. Jalaguier - P. Rojo Romeo
260.654P. Viktorovitch - X. Letartre
180.647C. Seassal - X. Letartre
230.644C. Seassal - P. Viktorovitch
110.570P. Rojo Romeo - X. Letartre
170.467J. L. Leclercq - P. Viktorovitch
80.462C. Seassal - P. Rojo Romeo
110.445P. Rojo Romeo - P. Viktorovitch
60.379C. Seassal - E. Jalaguier
50.378C. Seassal - S. Pocas
60.341E. Jalaguier - X. Letartre
50.339S. Pocas - X. Letartre
90.317J. L. Leclercq - X. Letartre
80.314C. Seassal - J. L. Leclercq
60.266E. Jalaguier - P. Viktorovitch
50.265P. Viktorovitch - S. Pocas
Documents par ordre de pertinence
000C64 (2003-01-01) Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane
000E13 (2002-12-30) InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser
001228 (2001) InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm
001229 (2001) InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 μm
000C72 (2003) Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
000E88 (2002) Microlasers à cristaux photoniques en InP reporté sur silicium
000C11 (2003-11) 3D structuring of multilayer suspended membranes including 2D photonic crystal structures
000A71 (2004) Surface operation photonic devices based on two dimensional InP membrane photonic crystals
000E33 (2002-09-01) Propagation losses of the fundamental mode in a single line-defect photonic crystal waveguide on an InP membrane
000E79 (2002-02-01) Near-field probing of active photonic-crystal structures
001C31 (1997) Optical characterization methods of InP based micro-opto-electro-mechanical systems
001C57 (1997) InP-based micro-mechanical tunable and selective photodetector for WDM systems
001F09 (1996) Low frequency noise sources in InAlAs/InGaAs MODFET's
000011 (2013) Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000366 (2010) 3D harnessing of light with photon cage
000635 (2007) Photonic crystal slab reflectors for compact passive and active optical devices
000851 (2006) Compact Photonic devices based on 1D and 2D photonic crystal broadband reflectors
000871 (2005) Tuning a two-dimensional photonic crystal resonance via optical carrier injection
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001274 (2001) Characterisation of 2D photonic crystals cavities on InP membranes
001294 (2000-12-01) InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation
001432 (2000) InP-based MOEMS and related topics
001664 (1999) Smart-Cut process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
001994 (1998) Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001995 (1998) Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications
001C42 (1997) Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of Schottky diodes
001E73 (1996) Stability and noise of Pd-Ge-Ag-Au ohmic contacts to InGaAs-InAlAs high electron mobility transistors
001F42 (1996) Fabrication of InP-based freestanding microstructures by selective surface micromachining
002031 (1995-08-28) Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP
000960 (2005) Grating enhanced MOEMS : a novel class of beam steering devices
000968 (2005) Feasibility of III-V on-silicon strain relaxed substrates
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
001466 (2000) Design and fabrication of optical microcavities using III-V semiconductor-based MOEMS
001583 (1999-04-05) Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams
001639 (1999) The strength of surface micromachined indium phosphide devices evaluated by Weibull analysis of tensile and bending tests
001688 (1999) Optical and mechanical design of an InP based tunable detector for gas sensing applications
001724 (1999) Highly tunable and selective fabry Perot filter based on InP-air Bragg mirrors for W.D.M. applications
001783 (1999) 2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector
001A87 (1997-09-15) Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties
001B94 (1997) The strength of indium phosphide based microstructures
000008 (2013) Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals
000580 (2008) Electrically injected InP microdisk lasers integrated with nanophotonic SOI circuits
000949 (2005) III-V layer transfer onto silicon and applications
000B49 (2004) Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000F48 (2002) Phase matching pseudo-resonant tunable InP-based MOEMS
001358 (2000-01) InP-based photonic micro-sensor for near field optical investigations
001501 (1999-12-06) High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001D59 (1996-09-01) Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma
002072 (1995-02-15) High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions
002114 (1995) Surface chemistry of InAlAs after (NH4)2Sx sulphidation
002136 (1995) Photoluminescence and band offsets of AlInAs/InP
002188 (1995) Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
002272 (1994-07) Optical properties of InAs/InP surface layers formed during the arsenic stabilization process
002298 (1994-04-15) Defect-assisted apparent lowering of band offsets
002518 (1993) Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm
002598 (1993) Optical properties and fluctuations of composition in Ga0.77In0.23As0.19Sb0.81 alloys
002823 (1992) Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices
002892 (1992) Growth of passivating UV/ozone oxides on InP : correlations between chemical composition and intefacial electrical properties
002945 (1991) Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP
002963 (1991) Tunnel deep level transient spectroscopy on a single quantum well
002984 (1991) Preparation electrical properties and interface studies of plasma nitride layers on n-type InP
002A71 (1991) Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy
002A79 (1990) Passivation des semiconducteurs III-V
002B00 (1990) The passivation of InP by arsenic surface stabilization and Al2O3 deposition : correlations between interface chemistry and capacitance measurements
002D59 (1988) Photoluminescence enhancement of InP treated with activated hydrogen
002E46 (1987) Passivation de la surface de phosphure d'indium par des éléments de la colonne V
002F27 (1987) Evidence of electron induced interfacial defects in electron-gun-deposited insulator InP structures
003007 (1986) New native oxide of InP with improved electrical interface properties
003027 (1986) Electronical properties of metal-insulator-semiconductor devices prepared on thermally treated InP in Phosphorus overpressure
Wicri

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