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Serveur d'exploration sur l'Indium

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Le cluster C. Starck - L. Goldstein

Terms

20C. Starck
38L. Goldstein
18A. Forchel
9J.-Y. Emery
12J. L. Gentner

Associations

Freq.WeightAssociation
90.326C. Starck - L. Goldstein
80.306A. Forchel - L. Goldstein
50.270J.-Y. Emery - L. Goldstein
50.234J. L. Gentner - L. Goldstein
Documents par ordre de pertinence
001328 (2000-07-17) High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography
001536 (1999-09-13) 1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
001806 (1998-11-09) 1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
002635 (1993) Lateral modulations in zero-net-strained GalnAsP multilayers growtn by gas source molecular-beam epitaxy
002668 (1993) Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
001640 (1999) The quantum confined Pockels effect in InGaAs-based multi-quantum wells
001785 (1999) 1-m W CW-RT monolithic VCSEL at 1.55 μm
001858 (1998-06-29) Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
001A04 (1998) GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
001B84 (1997) Undercut ridge structures : A novel approach to 1.3/1.55-μm vertical-cavity surface-emitting lasers
001B93 (1997) Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates
001D88 (1996-06-15) Splitting of electronic levels with positive and negative angular momenta in In0.53Ga0.47As/InP quantum dots by a magnetic field
001E11 (1996-04-15) Subband renormalization in dense electron-hole plasmas in In0.53Ga0.47As/InP quantum wires
002010 (1995-10-15) Barrier-confinement-controlled carrier transport into quantum wires
002064 (1995-03-01) Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer
002242 (1994-10-15) Lateral subband transitions in the luminescence spectra of a one-dimensional electron-hole plasma in In0.53Ga0.47As/InP quantum wires
002299 (1994-04-01) Selective band-gap blueshifting of InGaAsP/InGaAs(P) quantum wells by thermal intermixing with phosphorus pressure and dielectric capping
002427 (1994) Deep etched InGaAs/InP quantum dots with strong lateral confinement effects
002634 (1993) Lateral thickness modulations in alternate tensile-compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy
002789 (1992) Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002797 (1992) Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers
002A23 (1991) High quality InP and In1-xGaxAsyP1-y grown by gas source MBE
000555 (2008) Integrated wavelength monitoring in a photonic-crystal tunable laser diode
000744 (2006) Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers
000947 (2005) InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000966 (2005) Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules
000A20 (2005) Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B36 (2004) Integration of photonic crystal based tunable lasers, waveguides and Y-couplers
000C63 (2003-01-06) Two-dimensional photonic crystal coupled-defect laser diode
000C71 (2003) Wavelength switching by mode interference of coupled cavities with photonic crystal reflectors
000D29 (2003) Multiwafer gas source MBE development for InGaAsP/InP laser production
000D62 (2003) Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
000E34 (2002-09-01) Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device
000E44 (2002-07-15) Line narrowing in single semiconductor quantum dots: Toward the control of environment effects
001004 (2002) High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001010 (2002) Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers
001069 (2001-10-22) Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP-InP
001122 (2001-01-15) Excitonic contributions to the quantum-confined Pockels effect
001500 (1999-12-13) Observation of dark-pulse formation in gain-clamped semiconductor optical amplifiers by cross-gain modulation
001680 (1999) Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
001911 (1998) Undercut ridge structures : A novel approach to 1.3/1.55μm vertical-cavity lasers designed for continuous-wave operation
001981 (1998) Kinetics of dark excitons and excitonic trions in InGaAs single quantum well
001C65 (1997) High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
001C68 (1997) High performance 1.3 μm SLMQW BRS lasers for 85°C operation
001E69 (1996) Study on the reliability of an InP/InGaAsP integrated laser modulator
001F49 (1996) Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy
001F66 (1996) Chemical beam etching of InP in GSMBE
002035 (1995-08-01) Photoluminescence study of band-gap alignment of intermixed InAsP/InGaAsP superlattices
002339 (1994) X-ray, reflection high electron energy diffraction and X-ray photoelectron spectroscopy studies of InSe and γ-In2Se3 thin films grown by molecular beam deposition
002401 (1994) High FM bandwidth of DBR laser including butt-jointed electro-optical wavelength tuning sections
002530 (1993) Thermodynamic analysis of molecular beam epitaxy of compounds in the In-Se system
002547 (1993) Strained InAs/AlxGa0.48-xIn0.52As heterostructures : a tunable quantum well materials system for light emission from the near-IR to the mid-IR
002606 (1993) Observation by electroabsorption of strain-enhanced interface roughening in GaxIn1-xAs/Ga0.22In0.78As0.48P0.52 quantum wells prepared by gas-source molecular beam epitaxy
002629 (1993) Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator
002752 (1993) 1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy
002815 (1992) Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy
002858 (1992) Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures
002867 (1992) Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers
002879 (1992) In situ characterization of InP surfaces after low-energy hydrogen ion cleaning
002888 (1992) High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells
002B21 (1990) Optoelectronic devices by gsmbe
002B54 (1990) High-purity InP growth by grass sources molecular beam epitaxy (Gsmbe)
002B56 (1990) High performance DFB-MQW lasers at 1•5 μm grown by GSMBE
002D28 (1988) Two-dimensional electron gas at a Ga0.47In0.53As/(AlxGa1-x)0.48In0.52As interface
002F10 (1987) Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy
003032 (1986) Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy
003072 (1985) Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1-xInxAs/GaAs on GaAs quantum wells
Wicri

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