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Serveur d'exploration sur l'Indium

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Le cluster J. C. Harmand - L. H. Li

Terms

52J. C. Harmand
8L. H. Li
7L. Travers
5I. F. L. Dias
13J. F. Palmier
10V. Sallet
12J. L. Oudar

Associations

Freq.WeightAssociation
70.343J. C. Harmand - L. H. Li
60.314J. C. Harmand - L. Travers
50.310I. F. L. Dias - J. C. Harmand
70.269J. C. Harmand - J. F. Palmier
50.219J. C. Harmand - V. Sallet
50.200J. C. Harmand - J. L. Oudar
Documents par ordre de pertinence
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
000431 (2009) Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy
000501 (2008) Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
000636 (2007) Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice
000768 (2006) Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
000A05 (2005) Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000B31 (2004) Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B53 (2004) Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000B95 (2004) 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000E59 (2002-06-01) Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
001006 (2002) High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001070 (2001-10-22) Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
001342 (2000-03-13) Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
001460 (2000) Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInas-distributed Bragg mirrors on InP
001582 (1999-04-15) Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
001671 (1999) Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001913 (1998) Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices
001940 (1998) Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001971 (1998) Millimetre-wave negative differential conductance in GaInAs/AlInAs semiconductor superlattices
001B51 (1997-01-15) Band discontinuities in InxGa1-xAs-InP and InP-AlyIn1-yAs heterostructures: Evidence of noncommutativity
001C66 (1997) High power saturation, polarization insensitive electroabsorption modulator with spiked shallow wells
001D13 (1997) AlGaAsSb/AlAsSb microcavity designed for 1.55 μm and grown by molecular beam epitaxy
001E78 (1996) Short period superlattices under hydrostatic pressure
002373 (1994) Observation of Wannier-Stark ladders in GaInAs-AlGaInAs semiconductor superlattices
002377 (1994) Microwave miniband NDC in GaInAs/AlInAs superlattices
002590 (1993) Optically induced excitonic distribution in GaInAs-AlGaInA semiconductor superlattices under an electric field
000523 (2008) Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≃ 10%) saturable absorber quantum wells
000529 (2008) Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots
000599 (2008) Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy
000678 (2007) Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
000859 (2006) All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B45 (2004) High frequency performance of 3-quantum well GaInNas/GaAs ridge waveguide lasers emitting at 1.35 micron
000B79 (2004) Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000D04 (2003) Regeneration capabilities of passive saturable absorber-based optical 2R in 20Gbit/s RZ DWDM long-haul transmissions
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001640 (1999) The quantum confined Pockels effect in InGaAs-based multi-quantum wells
001699 (1999) Modeling and dynamic simulation of ultraviolet induced growing interfaces
001704 (1999) MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001818 (1998-10-15) Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect
001885 (1998-02-16) Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells
001A42 (1998) A Monte carlo simulation of silicon nitride thin film microstructure in ultraviolet localized-chemical vapor deposition
001B30 (1997-05-26) Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength
001B67 (1997) HEMT à canal composite GaInAs/InP pour circuits de modulation optique
001C10 (1997) Self-consistent 1-D solution of multiquantum-well laser equations
001C21 (1997) Potential-inserted InGaAs-AlGaInAs shallow quantum wells for electro-optical modulation at 1.55 μm
001C33 (1997) Nonlinear optical and bistable properties of a wafer-fused vertical-cavity device based on InGaAsP
001C62 (1997) Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux
001D84 (1996-07) Characterization of electrical damage induced by CH4/H2 reactive ion etching of molecular beam epitaxial InAlAs
001E44 (1996) Photodiode de type Métal-Semiconducteur-Métal (MSM) sur substrat d'InP
001E68 (1996) Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength
001F16 (1996) Investigation of low power all-optical bistability in an InGaAs-InAlAs superlattice
002037 (1995-07-10) High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum wells
002130 (1995) Proposal and demonstration of a symmetrical npipn electroabsorption modulator
002163 (1995) Investigation of low-power all-optical bistability in an InGaAs-InAlAs superlattice
002186 (1995) Electroabsorption modulators for high-bit-rate optical communications : a comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
002202 (1995) Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates
002312 (1994-02-07) Low power all-optical bistability in InGaAs-AlInAs superlattices: Demonstration of a wireless self-electro-optical effect device operating at 1.5 μm
002600 (1993) Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity
002630 (1993) Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device
002655 (1993) Highly thermally stable electrical compensation in oxygen implanted p-InAlAs
002714 (1993) Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's
002884 (1992) High-frequency operation of very low voltage, 1.55μm single-mode optical waveguide modulator based on wannier-stark localization
002957 (1991) Wavelength dependence of temporal response of high-speed GaInAs/AIInAs superlattice photodiodes
Wicri

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