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Serveur d'exploration sur l'Indium

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Le cluster F. Alexandre - J. L. Benchimol

Terms

30F. Alexandre
31J. L. Benchimol
14P. Launay

Associations

Freq.WeightAssociation
130.426F. Alexandre - J. L. Benchimol
70.336J. L. Benchimol - P. Launay
50.244F. Alexandre - P. Launay
Documents par ordre de pertinence
001F28 (1996) Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002148 (1995) Modern epitaxial techniques for HBT structures
002753 (1993) 'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth
001A26 (1998) CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001A30 (1998) Beam geometrical modelling of CBE on nonplanar substrate
001C22 (1997) Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001D07 (1997) Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
001D40 (1996-11) High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
001F71 (1996) Benefits of chemical beam epitaxy for micro and optoelectronic applications
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
002102 (1995) Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
002409 (1994) First hydride free GaInP/GaAs carbon doped HBT grown by CBE using DMAAs and TBP
002549 (1993) Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy
002862 (1992) Innovative passivated heterojunction bipolar transistor grown by CBE
002A16 (1991) Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002B58 (1990) Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
002B85 (1990) Chemical beam epitaxy of indium phosphide
002E75 (1987) Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy
000589 (2008) Demonstration of planar thick InP layers by selective MOVPE
000C91 (2003) Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 μm laser emission
000D36 (2003) Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000E87 (2002) Nitrures de faible gap épitaxiés sur substrat GaAs pour application optoélectronique : Croissance épitaxiale en phase vapeur aux organométalliques
000F61 (2002) Nitride-based long-wavelength lasers on GaAs substrates
000F98 (2002) InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
001232 (2001) InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001410 (2000) Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001428 (2000) Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001956 (1998) Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001A84 (1997-09-29) Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001B13 (1997-07) Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B62 (1997) Phototransistor TBH InGaAs/InP pour conversion optique/microondes
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001C55 (1997) InP/InGaAs double-HBT technology for high bit-rate communication circuits
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
001D68 (1996-08-15) Transport properties of hydrogenated p-GaInAs doped with carbon
001D73 (1996-07-15) Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes
001D85 (1996-06-24) p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP
001F69 (1996) CBE growth of InGaAs(P) alloys using TDMAAs and TBP
002045 (1995-06-15) Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002370 (1994) Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures
002A12 (1991) Interfacial-band discontinuities for strained layers on InxGa1-x as grown on (100) GaAs
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002A57 (1991) Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP : an explanation of low Be acceptor activity
003018 (1986) InGaAsP superlattices grown by liquid-phase epitaxy
003022 (1986) Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate
Wicri

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