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Serveur d'exploration sur l'Indium

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Le cluster G. Saint-Girons - I. Sagnes

Terms

18G. Saint-Girons
42I. Sagnes
13A. Mereuta
7M. Strassner
7G. Beaudoin
7L. Le Gratiet
6I. Robert-Philip
22S. Bouchoule

Associations

Freq.WeightAssociation
120.436G. Saint-Girons - I. Sagnes
100.428A. Mereuta - I. Sagnes
70.408I. Sagnes - M. Strassner
70.408G. Beaudoin - I. Sagnes
60.350I. Sagnes - L. Le Gratiet
50.315I. Robert-Philip - I. Sagnes
90.296I. Sagnes - S. Bouchoule
Documents par ordre de pertinence
000174 (2011) Structural analysis of site-controlled InAs/InP quantum dots
000400 (2009) Single photon sources using InAs/InP quantum dots
000526 (2008) One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000B98 (2004) 1.55 μm VCSELs with InP/air-gap distributed bragg reflectors
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
000322 (2010) Engineering of InAsP/InP quantum dot emission for long-distance Quantum communications
000519 (2008) Photonic crystal nanolasers with controlled spontaneous emission
000617 (2007) Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000735 (2007) 1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000851 (2006) Compact Photonic devices based on 1D and 2D photonic crystal broadband reflectors
000939 (2005) Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
000A86 (2004) Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000A87 (2004) Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser
000B97 (2004) 2D AlGaAs/AlOx photonic crystal high-Q resonator around 1.5μm
000F75 (2002) Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
001221 (2001) Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
001410 (2000) Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001492 (2000) 1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
000590 (2008) De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
000635 (2007) Photonic crystal slab reflectors for compact passive and active optical devices
000708 (2007) Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
000A97 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000B24 (2004) Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
000B52 (2004) Fabrication of ultra-thin InP membranes and their application for high reflective mirrors in tunable vertical-cavity devices
000B81 (2004) Au/In2 bonding of InP-based MOEMS
000E72 (2002-03-15) Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001434 (2000) InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
001670 (1999) Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
000113 (2012) Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000172 (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000237 (2011) Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000667 (2007) Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000734 (2007) 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000D63 (2003) Generation of non-classical light by single quantum dots
000E52 (2002-06-15) Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
001323 (2000-08-28) Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities
001350 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001351 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001363 (2000) Diodes électroluminescentes à microcavité pour le contrôle de l'émission spontanée
001372 (2000) Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001392 (2000) Simultaneously regenerated 4×40 Gbit/s dense WDM transmission over 10,000 km using single 40 GHz InP Mach-Zehnder modulator
001467 (2000) Dense WDM (0.27/bit/s/Hz) 4×40 Gbit/s dispersion-managed transmission over 10 000 km with in-line optical regeneration by channel pairs
001491 (2000) 2×40 Gbit/s WDM optically regenerated dispersion-managed transmission over 10000 km with narrow channel spacing
001671 (1999) Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001704 (1999) MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001940 (1998) Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001943 (1998) Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates
001953 (1998) Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001996 (1998) High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001C10 (1997) Self-consistent 1-D solution of multiquantum-well laser equations
001F45 (1996) Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber
001F64 (1996) Chirp compensation in mode-locked DFB laser diodes with extended cavity
002821 (1992) Phase-amplitude coupling factor of single-mode gain-switched InGaAsP laser diodes
Wicri

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