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Serveur d'exploration sur l'Indium

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Le cluster E. Le Bourhis - J. P. Riviere

Terms

17E. Le Bourhis
7J. P. Riviere
75G. Patriarche
17L. Largeau
11F. Glas

Associations

Freq.WeightAssociation
50.458E. Le Bourhis - J. P. Riviere
140.392E. Le Bourhis - G. Patriarche
160.448G. Patriarche - L. Largeau
50.174F. Glas - G. Patriarche
Documents par ordre de pertinence
000946 (2005) Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity
000A06 (2005) Conservative indentation flow throughout thin (011) InP foils
000B37 (2004) Indentation punching through thin (011) InP
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001C39 (1997) Material flow at the surface of indented indium phosphide
000025 (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000174 (2011) Structural analysis of site-controlled InAs/InP quantum dots
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000537 (2008) Nanoindentation response of a thin InP membrane
000768 (2006) Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
000A49 (2004-01-12) Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
000A81 (2004) Solid-solution strengthening in ordered InxGa1-xP alloys
000B24 (2004) Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000D11 (2003) Plastic deformation of III-V semiconductors under concentrated load
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
000F20 (2002) Strength enhancement of compensated strained InP/AlP superlattice
000F75 (2002) Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
000F85 (2002) Low-load deformation of InP under contact loading; comparison with GaAs
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001076 (2001-09-17) Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice
001133 (2001) Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001194 (2001) Non-linear solid solution strengthening of InGaAs alloy
001233 (2001) In-depth deformation of InP under a Vickers indentor
001352 (2000-01-17) Step-bunching instability in strained-layer superlattices grown on vicinal substrates
001395 (2000) Room-temperature plasticity of InAs
001468 (2000) Deformations induced by a Vickers indentor in InP at room temperature
001A61 (1997-11-15) Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
001D44 (1996-10-07) Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/InGaAsP multiquantum wells with high compensated strains
001F05 (1996) Material flow under an indentor in indium phosphide
000012 (2013) Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000060 (2013) Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000116 (2012) Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000120 (2012) InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000172 (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000400 (2009) Single photon sources using InAs/InP quantum dots
000513 (2008) RECENT DEVELOPMENTS OF InP-BASED QUANTUM DASHES FOR DIRECTLY MODULATED LASERS AND SEMICONDUCTOR OPTICAL AMPLIFIERS
000519 (2008) Photonic crystal nanolasers with controlled spontaneous emission
000526 (2008) One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000590 (2008) De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
000617 (2007) Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000657 (2007) Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007) Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000667 (2007) Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000678 (2007) Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
000752 (2006) Towards a mid-infrared polaron laser using InAs/GaAs self-assembled quantum dots
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000965 (2005) First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
000A97 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000B61 (2004) Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers
000C25 (2003-08-15) Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
000C60 (2003-02-10) Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime
000C92 (2003) Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
000D61 (2003) Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D93 (2003) Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
000E72 (2002-03-15) Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001070 (2001-10-22) Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
001109 (2001-03-19) Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
001221 (2001) Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001342 (2000-03-13) Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
001436 (2000) In-depth structure of rosette arms in indium phosphide
001953 (1998) Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001996 (1998) High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001B13 (1997-07) Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001B52 (1997-01-06) 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy
001C02 (1997) Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers
001C93 (1997) Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001E08 (1996-05) Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture
001E24 (1996-03-01) Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
001E68 (1996) Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength
002097 (1995) Gravure hélicon de l'InP en plasma HBr. Morphologie et caractérisation des défauts de surface
002110 (1995) The consequences of the atomic size effect in quantitative high resolution electron microscopy
002162 (1995) Investigation of the plasticity of InP as a function of temperature
002619 (1993) Microstructure of high-temperature plastically deformed Zn-doped CdTe ; comparison with In-doped Gaas
002C35 (1989) Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy
002D86 (1988) Influence of indium on the dissociation of dislocations in GaAs at high temperature
002E77 (1987) Study of static atomic displacements by channelled-electron-beam-induced X-ray emission : Application to In0,53Ga0.47 As alloys
002F38 (1987) Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: application to immiscible III-V alloys
003090 (1984) Applications du S.T.E.M. à la microanalyse des semiconducteurs III-V
Wicri

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