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Serveur d'exploration sur l'Indium

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Le cluster B. Rose - D. Robein

Terms

13B. Rose
15D. Robein
23C. Kazmierski
7M. Blez
24M. Quillec
22G. Le Roux
10P. Legay

Associations

Freq.WeightAssociation
70.501B. Rose - D. Robein
60.473C. Kazmierski - M. Blez
50.386M. Blez - M. Quillec
70.377C. Kazmierski - D. Robein
60.405G. Le Roux - P. Legay
80.348G. Le Roux - M. Quillec
70.298C. Kazmierski - M. Quillec
Documents par ordre de pertinence
001704 (1999) MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
002A32 (1991) First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
001590 (1999-02-15) Oxide confining layer on an InP substrate
001C93 (1997) Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
002524 (1993) Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation
002855 (1992) Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002885 (1992) High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasers
002A07 (1991) MBE growth of graded index AlGaInAs MQW lasers on InP
002A21 (1991) High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
002B36 (1990) Low-threshold GRIN-SCH AlGaInAs 1•55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy
002C39 (1989) Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001B13 (1997-07) Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B30 (1997-05-26) Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength
001C35 (1997) Monolithic vertical cavity device lasing at 1.55μm in InGaAlAs system
001D85 (1996-06-24) p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP
001E24 (1996-03-01) Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
002218 (1995) 8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
002370 (1994) Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures
002675 (1993) Experimental study of the hydrogen complexes in indium phosphide
002791 (1992) Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP
002837 (1992) New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product
002925 (1992) Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation
002A67 (1991) Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process
002A69 (1991) Application of AP MOVPE to a new butt-coupling scheme
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium
003022 (1986) Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate
000659 (2007) Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000B96 (2004) 42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001363 (2000) Diodes électroluminescentes à microcavité pour le contrôle de l'émission spontanée
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001671 (1999) Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001996 (1998) High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001D73 (1996-07-15) Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes
001F45 (1996) Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber
001F69 (1996) CBE growth of InGaAs(P) alloys using TDMAAs and TBP
001F71 (1996) Benefits of chemical beam epitaxy for micro and optoelectronic applications
002000 (1995-11-01) Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration
002019 (1995-09-15) Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers
002045 (1995-06-15) Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002102 (1995) Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002103 (1995) Ultra-fast optical switching operation of DBR lasers using an electro-optical tuning section
002144 (1995) Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser
002146 (1995) Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
002171 (1995) High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
002202 (1995) Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates
002207 (1995) Butt-jointed DBR laser with 15 nm tunability grown in three MOVPE steps
002423 (1994) Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement
002662 (1993) Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy
002714 (1993) Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's
002821 (1992) Phase-amplitude coupling factor of single-mode gain-switched InGaAsP laser diodes
002860 (1992) Interest in AlGalnAs on InP for optoelectronic applications
002882 (1992) Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
002991 (1991) Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching technique
002A16 (1991) Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002B59 (1990) GaInAsP/InP integrated ridge laser with a butt-jointed transparent optical waveguide fabricated by single-step metalorganic vapor-phase epitaxy
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002B85 (1990) Chemical beam epitaxy of indium phosphide
002C38 (1989) Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
002C69 (1989) Hydrogen passivation of shallow acceptors in p-type InP
002C87 (1989) Auto lattice matching effect for AllnAs grown by MBE at high substrate temperature
002D24 (1988) Zn diffusion in doped InP: interstitial charge state and apparent activation energy
002D95 (1988) Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy
002D96 (1988) Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy
002E25 (1988) Blue shift of the absorption edge in AlGalnAs-GalnAs superlattices: proposal for an original electro-optical modulator
003018 (1986) InGaAsP superlattices grown by liquid-phase epitaxy
003117 (1984) Energy and orientation dependence of electron-irradiation-induced defects in InP
Wicri

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