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| Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers |
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| On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations |
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| Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions |
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| Dwell-time related saturation of phase coherence in ballistic quantum dots |
| 000989 (2005) |
| Dwell-time-limited coherence in open quantum dots |
| 000E15 (2002-12-15) |
| Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot |
| 000E42 (2002-08-05) |
| Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments |
| 001101 (2001-05-07) |
| Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy |
| 001240 (2001) |
| Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides |
| 001330 (2000-07-10) |
| Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy |
| 001589 (1999-02-15) |
| Type II and mixed type I-II radiative recombinations in AlInAs-InP heterostructures |
| 001777 (1999) |
| A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs |
| 001837 (1998-08-15) |
| X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs |
| 001838 (1998-08-15) |
| Photoluminescence study of the interface in type II InAlAs-InP heterostructures |
| 001843 (1998-07-15) |
| Interface quality and electron transfer at the GaInP on GaAs heterojunction |
| 001881 (1998-03-02) |
| Direct and inverse equivalent InAlAs-InP interfaces grown by gas-source molecular beam epitaxy |
| 001908 (1998) |
| XPS study of GaInP on GaAs interface |
| 001A38 (1998) |
| A study of GaInP/GaAs interfaces : metallurgical coupling of successive quantum wells |
| 001D10 (1997) |
| As surface segregation during the growth of GaInP on GaAs |
| 002262 (1994-08-15) |
| InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface |
| 000666 (2007) |
| MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications |
| 000677 (2007) |
| High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates |
| 000720 (2007) |
| Ballistic nano-devices for high frequency applications |
| 000827 (2006) |
| Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy |
| 000955 (2005) |
| High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001) |
| 000A14 (2005) |
| As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000A58 (2004) |
| Two-photon absorption in InP substrates in the 1.55 μm range |
| 000B74 (2004) |
| Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000C65 (2003-01-01) |
| Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy |
| 000E58 (2002-06-03) |
| Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density |
| 001384 (2000) |
| Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates |
| 001661 (1999) |
| Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus |
| 001726 (1999) |
| High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy |
| 001786 (1999) |
| 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances |
| 001788 (1999) |
| 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy |
| 001898 (1998-01) |
| Nonselective wet chemical etching of GaAs and AlGaInP for device applications |
| 001980 (1998) |
| Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells |
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| HEMT sur substrat InP de longueur de grille Lg=0,15 μm : comparaison entre un canal GaInAs et un canal composite GaInAs/InP |
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| Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds |
| 000115 (2012) |
| Investigation of indium nitride for micro-nanotechnology |
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| Ballistic nanodevices for high frequency applications |
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| High performances of InP channel power HEMT at 94 GHz |
| 000A09 (2005) |
| Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application |
| 000A13 (2005) |
| CBr4 and be heavily doped InGaAs grown in a production MBE system |
| 000A22 (2005) |
| 94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP |
| 000A61 (2004) |
| Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures |
| 000B38 (2004) |
| InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance |
| 000B39 (2004) |
| InAlAs-InGaAs double-gate HEMTs on transferred substrate |
| 000C03 (2003-12-15) |
| Experimental and theoretical investigation of Ga1-xInxAs surface reactivity to phosphorus |
| 000D47 (2003) |
| Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs |
| 000E73 (2002-03-15) |
| Experimental study of hot-electron inelastic scattering rate in p-type InGaAs |
| 001031 (2002) |
| DOS optical switch for microwave optical links based applications |
| 001138 (2001) |
| Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001310 (2000-10-15) |
| Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001425 (2000) |
| Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors |
| 001448 (2000) |
| Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler |
| 001550 (1999-07-05) |
| Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path |
| 001782 (1999) |
| 94-GHz MMIC CPW low-noise amplifier on InP |
| 001863 (1998-05-25) |
| Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy |
| 001934 (1998) |
| Step-like heterostructure barrier varactor |
| 001999 (1998) |
| High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors |
| 001A25 (1998) |
| Capacitance engineering for InP-based heterostructure barrier varactor |
| 001A29 (1998) |
| Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure |
| 001A43 (1998) |
| 5-mw and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler |
| 001E78 (1996) |
| Short period superlattices under hydrostatic pressure |
| 001F32 (1996) |
| High performance InP-based heterostructure barrier varactors in single and stack configuration |
| 001F55 (1996) |
| Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor |
| 002021 (1995-09-15) |
| Effective masses in In1-xGaxAs superlattices derived from Franz-Keldysh oscillations |
| 003105 (1984) |
| Optical absorption studies of plastically deformed InSb |
| 003116 (1984) |
| Free-carrier optical absorption induced by dislocation scattering mechanisms in III-V compounds |
