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Serveur d'exploration sur l'Indium

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Le cluster A. Trampert - E. Tournie

Terms

12A. Trampert
25E. Tournie
8M.-A. Pinault
11K. H. Ploog
12J.-M. Chauveau

Associations

Freq.WeightAssociation
100.577A. Trampert - E. Tournie
80.566E. Tournie - M.-A. Pinault
60.522A. Trampert - K. H. Ploog
70.422E. Tournie - K. H. Ploog
50.289E. Tournie - J.-M. Chauveau
Documents par ordre de pertinence
000C37 (2003-05-19) Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C51 (2003-03-24) GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000D86 (2003) Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
000A37 (2004-04-05) Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000C26 (2003-08-15) Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
002113 (1995) Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures
000430 (2009) Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000669 (2007) Interface analysis of InAs/GaSb superlattice grown by MBE
000676 (2007) High-density InSb-based quantum dots emitting in the mid-infrared
000769 (2006) Structural and optical properties of InSb quantum dots for mid-IR applications
000C01 (2003-12-15) Isoelectronic traps in heavily doped GaAs:(In,N)
000E57 (2002-06-03) Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
001113 (2001-03-12) On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells
001312 (2000-10-02) Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
002055 (1995-04-24) Novel plastic strain-relaxation mode in highly mismatched III-V layers induced by two-dimensional epitaxial growth
002547 (1993) Strained InAs/AlxGa0.48-xIn0.52As heterostructures : a tunable quantum well materials system for light emission from the near-IR to the mid-IR
002876 (1992) InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range
000126 (2012) Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000155 (2011) The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000270 (2010) Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000295 (2010) Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method
000318 (2010) Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000422 (2009) MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
000907 (2005) Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs
000945 (2005) Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
000C47 (2003-04-01) Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
001322 (2000-09) Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
001376 (2000) Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001976 (1998) Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
001D43 (1996-10-07) Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular-beam epitaxy
002521 (1993) X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs(100) heterointerface
002854 (1992) Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs
002946 (1991) Préparation et étude de diodes laser à GalnAsSb-GaAlAsSb fonctionnant en continu à 80K
002A27 (1991) GaInAsSb/GaSb pn photodiodes for detection to 2.4μm
002C01 (1990) 2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy
002E24 (1988) Characteristic temperature T0 of Ga0.83In0.17As0.15Sb0.85/Al0.27Ga0.73As0.02Sb0.98 injection lasers
Wicri

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