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Serveur d'exploration sur l'Indium

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Le cluster C. Levallois - C. Paranthoen

Terms

6C. Levallois
18C. Paranthoen
34O. Dehaese
29N. Bertru
9C. Platz
13P. Caroff

Associations

Freq.WeightAssociation
60.577C. Levallois - C. Paranthoen
130.525C. Paranthoen - O. Dehaese
160.510N. Bertru - O. Dehaese
110.481C. Paranthoen - N. Bertru
80.381O. Dehaese - P. Caroff
60.555C. Platz - P. Caroff
60.343C. Platz - O. Dehaese
60.309N. Bertru - P. Caroff
50.309C. Platz - N. Bertru
Documents par ordre de pertinence
000D65 (2003) Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy
000274 (2010) QD laser on InP substrate for 1.55 μm emission and beyond
000929 (2005) Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000976 (2005) Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
000A08 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000D61 (2003) Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000467 (2009) Critical thickness for InAs quantum dot formation on (311)B InP substrates
000713 (2007) Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
000737 (2006) Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm
000740 (2006) Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000780 (2006) Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
000844 (2006) Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors
000855 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000A42 (2004-03-15) Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects
000F28 (2002) Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
000F50 (2002) Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001013 (2002) Formation of 3D InAs quantum dots on InP substrate
001018 (2002) Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates
001109 (2001-03-19) Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
001338 (2000-04-15) Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots
001419 (2000) Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates
000176 (2011) Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
000465 (2009) Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL
000857 (2006) Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
000C50 (2003-03-24) Simultaneous two-state lasing in quantum-dot lasers
000092 (2012) Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction
000140 (2012) Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device
000487 (2008) Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000682 (2007) First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
000738 (2006) Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
000C23 (2003-08-15) Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells
000C52 (2003-03-17) Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range
000D54 (2003) In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP
001093 (2001-06-25) High-speed 1.55 μm Fe-doped multiple-quantum-well saturable absorber on InP
001099 (2001-05-14) Wetting layer carrier dynamics in InAs/InP quantum dots
001350 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001351 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001568 (1999-05-31) Wavelength tuning of InAs quantum dots grown on (311)B InP
001586 (1999-03-22) Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001593 (1999-02-01) Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
001658 (1999) Strain relaxation at cleaved surfaces studied by atomic force microscopy
001668 (1999) Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm
001750 (1999) Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001837 (1998-08-15) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
001843 (1998-07-15) Interface quality and electron transfer at the GaInP on GaAs heterojunction
001908 (1998) XPS study of GaInP on GaAs interface
001976 (1998) Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
001A38 (1998) A study of GaInP/GaAs interfaces : metallurgical coupling of successive quantum wells
001A98 (1997-08-11) Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
001C36 (1997) Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
001D10 (1997) As surface segregation during the growth of GaInP on GaAs
001D43 (1996-10-07) Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular-beam epitaxy
002079 (1995-01-02) Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds
002089 (1995-01) Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy
002341 (1994) UV-O3 preparation of InAs (100) surfaces prior to MBE growth
Wicri

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