| 001209 (2001) |
| MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm |
| 001210 (2001) |
| MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers |
| 001311 (2000-10-09) |
| Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm |
| 001335 (2000-05-01) |
| InAs(PSb)-based W quantum well laser diodes emitting near 3.3 μm |
| 001442 (2000) |
| High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers |
| 000867 (2005) |
| Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range |
| 001593 (1999-02-01) |
| Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy |
| 001669 (1999) |
| Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes |
| 001A98 (1997-08-11) |
| Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures |
| 001F52 (1996) |
| Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy |
| 002397 (1994) |
| High-power low-threshold Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy |
| 000270 (2010) |
| Sb-based laser sources grown by molecular beam epitaxy on silicon substrates |
| 000669 (2007) |
| Interface analysis of InAs/GaSb superlattice grown by MBE |
| 000917 (2005) |
| Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 μm spectral region |
| 000935 (2005) |
| MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection |
| 001435 (2000) |
| InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region |
| 001731 (1999) |
| GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation |
| 002946 (1991) |
| Préparation et étude de diodes laser à GalnAsSb-GaAlAsSb fonctionnant en continu à 80K |
| 002E24 (1988) |
| Characteristic temperature T0 of Ga0.83In0.17As0.15Sb0.85/Al0.27Ga0.73As0.02Sb0.98 injection lasers |
| 000136 (2012) |
| Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain |
| 000185 (2011) |
| Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode |
| 000246 (2011) |
| Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation |
| 000325 (2010) |
| Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation |
| 000D52 (2003) |
| InAs/AlSb quantum cascade lasers operating at 6.7 μm |
| 001E21 (1996-03-15) |
| New III-V semiconductor lasers emitting near 2.6 μm |
| 002096 (1995) |
| Indice de réfraction de GaSb, Ga0,88In0,12As0,1Sb0,9 de 2100 nm à 2160 nm |
| 002518 (1993) |
| Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm |
| 002854 (1992) |
| Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs |
| 002C01 (1990) |
| 2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy |
| 000052 (2013) |
| InAs/AISb quantum cascade lasers operating near 20 μm |
| 000295 (2010) |
| Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method |
| 000422 (2009) |
| MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones |
| 000430 (2009) |
| Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy |
| 000475 (2009) |
| A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation |
| 000480 (2008) |
| nBn Based Infrared Detectors Using Type-II InAs/(In,Ga)Sb Superlattices |
| 000531 (2008) |
| Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser |
| 000561 (2008) |
| InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations |
| 000562 (2008) |
| InAs-based quantum cascade lasers |
| 000676 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000717 (2007) |
| Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers |
| 000769 (2006) |
| Structural and optical properties of InSb quantum dots for mid-IR applications |
| 000953 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000A13 (2005) |
| CBr4 and be heavily doped InGaAs grown in a production MBE system |
| 000A14 (2005) |
| As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000B21 (2004) |
| Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm |
| 000B23 (2004) |
| Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm |
| 000B74 (2004) |
| Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000C49 (2003-04) |
| Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range |
| 001533 (1999-09-27) |
| Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells |
| 001976 (1998) |
| Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy |
| 001D34 (1996-11-11) |
| Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm |
| 001D64 (1996-08-26) |
| Response to ′′Comment on ′Accurate refractive index measurements of doped and undoped InP by a grating coupling technique′ ′′ [Appl. Phys. Lett. 69, 1332 (1996)] |
| 001E26 (1996-03) |
| Mesure des indices de réfraction de semiconducteurs III - V en structure guide d'onde |
| 001F31 (1996) |
| High sensitivity 2.5 μm photodiodes with metastable GaInAsSb absorbing layer |
| 002264 (1994-08-01) |
| High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 μm |
| 002291 (1994-05-09) |
| 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers |
| 002628 (1993) |
| Low temperature photoluminescence spectra of Ga0.77In0.23As0.19Sb0.81 compounds |
| 002876 (1992) |
| InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range |
| 002A27 (1991) |
| GaInAsSb/GaSb pn photodiodes for detection to 2.4μm |
| 002D45 (1988) |
| Shallow diffusion of zinc into InAs and InAsSb |
| 002D61 (1988) |
| Performance evaluation of GaAlAsSb/GaInAsSb SAM-APDs for high bit rate transmissions in the 2.5 μm wavelength region |
| 002E32 (1987) |
| Préparation d'hétérostructures Ga In As Sb / Ga Sb émettant à 2,5 μm |
| 002E72 (1987) |
| The influence of supercooling on the liquid phase epitaxial growth of InAs1-xSbx on (100) GaSb substrates |
| 002F52 (1987) |
| Analysis of threshold current density in 2•2 μm GaInAsSb/GaAlAsSb.GaSb DH lasers |
