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Serveur d'exploration sur l'Indium

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Le cluster B. Salem - G. Bremond

Terms

13B. Salem
27G. Bremond
7J. Olivares
20F. Hassen
29H. Maaref
6L. Sfaxi

Associations

Freq.WeightAssociation
110.587B. Salem - G. Bremond
60.436G. Bremond - J. Olivares
80.412B. Salem - H. Maaref
120.498F. Hassen - H. Maaref
60.455H. Maaref - L. Sfaxi
80.286G. Bremond - H. Maaref
Documents par ordre de pertinence
000D00 (2003) Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
000330 (2010) Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000702 (2007) Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000819 (2006) Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000975 (2005) Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000A59 (2004) Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
001667 (1999) Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
000221 (2011) Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
000238 (2011) Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000450 (2009) Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000B89 (2004) Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000C22 (2003-08-15) Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000C38 (2003-05-15) Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000D07 (2003) Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
001103 (2001-05) Growth of GaInTlAs layers on InP by molecular beam epitaxy
001242 (2001) Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001285 (2001) A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructure
001414 (2000) Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001546 (1999-08-01) Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001714 (1999) Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001C30 (1997) Optical characterization of highly mismatched InP/GaAs(111)B epitaxial heterostructures
000060 (2013) Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000268 (2010) Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
001383 (2000) Structural and electronic properties of poly(meta/para phenylene)
001388 (2000) Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)
001848 (1998-07-01) A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001C26 (1997) Optical properties of InP epilayers grown on (111)B GaP substrates by metalorganic chemical vapor deposition
002061 (1995-04) Caractérisation électrique et optique de couches de GaAs hétéroépitaxiées sur InP et analyse des dispositifs MESFETs fabriqués sur ces couches
002141 (1995) Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C
002155 (1995) Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP
002259 (1994-09) Photorefractive effect in InP:Fe dominated by holes at room temperature: influence of the indirect transitions
002352 (1994) Spin orientation by optical pumping in InxGa1-xAs/AlAs multiple quantum wells
002552 (1993) Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates
002553 (1993) Spin orientation by optical pumping in strained InxGa1-xAs/GaAs quantum wells
002593 (1993) Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002693 (1993) Electrical conduction in low temperature grown InP
002694 (1993) Electrical conduction in low temperature grown InP
002695 (1993) Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD
002744 (1993) A new encapsulation method of InP during post implantation annealing
002810 (1992) Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells
002907 (1992) Electrical behavior of Yb ion in p- and n-type InP
002953 (1991) Etude de contacts métal-InP(n) clivé : barrière de Schottky et états d'interface
002B52 (1990) Identification of the Fe acceptor llevel in Ga0.47In0.53As
002C23 (1989) Caractérisation électronique d'interfaces profondes AI-InP
002C90 (1989) Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory
002E94 (1987) Properties of InP doped with Led ions
002F85 (1986) The donor level of vanadium in InP
003000 (1986) Properties of titanium in InP
003047 (1986) Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide
Wicri

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