| 000942 (2005) |
| Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots |
| 000A33 (2004-04-15) |
| Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001) |
| 000C38 (2003-05-15) |
| Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots |
| 000D13 (2003) |
| Photoconductive spectral analysis of InAs quantum dot under normal incidence |
| 000E48 (2002-07-01) |
| Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) |
| 001103 (2001-05) |
| Growth of GaInTlAs layers on InP by molecular beam epitaxy |
| 001220 (2001) |
| Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications |
| 001242 (2001) |
| Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy |
| 001385 (2000) |
| Strained InAs nanostructures self-organised on high-index InP(113)B |
| 001388 (2000) |
| Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001) |
| 001774 (1999) |
| Alloying effects in self-assembled InAs/InP dots |
| 001803 (1998-11-16) |
| Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) |
| 001F27 (1996) |
| In situ XPS investigation of indium surface segregation for Ga1-xInxAs and Al1-xInxAs alloys grown by MBE on InP(001) |
| 002288 (1994-05-15) |
| X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures |
| 000973 (2005) |
| Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors |
| 000A32 (2004-05-01) |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) |
| 000B93 (2004) |
| A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium |
| 000C29 (2003-07-15) |
| Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities |
| 000F55 (2002) |
| Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates |
| 001058 (2001-12-24) |
| Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates |
| 001119 (2001-02-15) |
| Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires on In1-xAlxAs/InP |
| 001603 (1999-01-18) |
| Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001) |
| 001924 (1998) |
| Surface spinodal decomposition in low temperature Al048In052As grown on InP(001) by molecular beam epitaxy |
| 001A72 (1997-10-15) |
| Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001) |
| 002072 (1995-02-15) |
| High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions |
| 002890 (1992) |
| Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEM |
| 002919 (1992) |
| Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy |
| 002945 (1991) |
| Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP |
| 002B00 (1990) |
| The passivation of InP by arsenic surface stabilization and Al2O3 deposition : correlations between interface chemistry and capacitance measurements |
| 000366 (2010) |
| 3D harnessing of light with photon cage |
| 000670 (2007) |
| Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells |
| 000808 (2006) |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000968 (2005) |
| Feasibility of III-V on-silicon strain relaxed substrates |
| 000A85 (2004) |
| STM and FIB nano-structuration of surfaces to localise InAs/InP(0 0 1) quantum dots |
| 000C22 (2003-08-15) |
| Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys |
| 000D72 (2003) |
| Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001) |
| 000E22 (2002-11-15) |
| Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001) |
| 001061 (2001-11-15) |
| Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices |
| 001229 (2001) |
| InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 μm |
| 001294 (2000-12-01) |
| InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation |
| 001501 (1999-12-06) |
| High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach |
| 001549 (1999-07-12) |
| High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices |
| 001622 (1999) |
| Les super-réseaux de monocouches fractionnaires (InAs)n/(GaAs)0.26 épitaxiés sur InP par EJMSS pour les applications dans la gamme spectrale 2-2.5μm |
| 001725 (1999) |
| Highly strained InxGa1-xAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 μm spectral range |
| 001A13 (1998) |
| Electro-absorption modulator using a type-II quantum well in the InxGa1-xAs/InAlAs/InP system |
| 001B15 (1997-06-16) |
| Type II recombination and band offset determination in a tensile strained InGaAs quantum well |
| 001E80 (1996) |
| Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP |
| 001F73 (1996) |
| Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension |
| 002023 (1995-09-01) |
| Evidence for inhomogeneous growth rates in partially relaxed InGaAs/InP heterostructures |
| 002053 (1995-05-15) |
| Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures |
| 002080 (1995-01-02) |
| Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures |
| 002114 (1995) |
| Surface chemistry of InAlAs after (NH4)2Sx sulphidation |
| 002170 (1995) |
| High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures |
| 002272 (1994-07) |
| Optical properties of InAs/InP surface layers formed during the arsenic stabilization process |
| 002295 (1994-04-15) |
| Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers |
| 002879 (1992) |
| In situ characterization of InP surfaces after low-energy hydrogen ion cleaning |
| 002A39 (1991) |
| Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP |
| 002B68 (1990) |
| Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3 |
| 002C88 (1989) |
| Anodic oxidation of InP in pure water |
| 002D06 (1988) |
| Spectroscopie XPS d'oxydes et de sulfures d'InP: composés étalons et couches de passivation |
| 002D19 (1988) |
| Composition chimique des sulfures natifs formés sur InP par plasma indirect |
| 002D63 (1988) |
| Optical properties of native oxides on InP |
| 002E31 (1987) |
| Spectroscopie XPS d'oxydes et de sulfures d'InP: composés étalons et couches de passivation |
| 002E39 (1987) |
| Sulfuration assistée par plasma de InP |
| 003007 (1986) |
| New native oxide of InP with improved electrical interface properties |
| 003063 (1985) |
| On the nature of oxides on InP surfaces |
| 000060 (2013) |
| Excitonic properties of wurtzite InP nanowires grown on silicon substrate |
| 000113 (2012) |
| Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate |
| 000120 (2012) |
| InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates |
| 000127 (2012) |
| Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon |
| 000236 (2011) |
| Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates |
| 000237 (2011) |
| Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature |
| 000330 (2010) |
| Electrical properties of self-assembled InAs/InAlAs quantum dots on InP |
| 000434 (2009) |
| Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01) |
| 000651 (2007) |
| Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions |
| 000702 (2007) |
| Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers |
| 000786 (2006) |
| Photoreflectance spectroscopy of self-organized InAs/InP(0 01) quantum sticks emitting at 1.55 μm |
| 000788 (2006) |
| Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1) |
| 000819 (2006) |
| Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001) |
| 000823 (2006) |
| Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths |
| 000836 (2006) |
| Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure |
| 000888 (2005) |
| Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence |
| 000A24 (2004-06-01) |
| Study of thiol-induced adhesion of stressed III-V semiconductor on wax using thin film elastic relaxation |
| 000A29 (2004-05-07) |
| Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction |
| 000B49 (2004) |
| Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates |
| 000C16 (2003-09-01) |
| Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds |
| 000C61 (2003-02-01) |
| Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy |
| 000C64 (2003-01-01) |
| Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane |
| 000D41 (2003) |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000E88 (2002) |
| Microlasers à cristaux photoniques en InP reporté sur silicium |
| 001188 (2001) |
| Optical and structural investigation of InAs/AlSb/GaSb heterostructures |
| 001228 (2001) |
| InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm |
| 001275 (2001) |
| Characterisation and optimisation of MBE grown arsenide/antimonide interfaces |
| 001696 (1999) |
| NIR resonant cavity enhanced InP/InGaAs strained quantum well inter-band photo-detector |
| 001783 (1999) |
| 2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector |
| 001839 (1998-08-10) |
| Design and simulation of low-threshold antimonide intersubband lasers |
| 001857 (1998-07) |
| Layer by layer growth mode stabilization and step-edge smoothing of cation-stabilized In1-xGaxAs strained layers grown on InP |
| 001891 (1998-01-26) |
| Alloying effects on the critical layer thickness in InxGa1-xAs/InP heterostructures analyzed by Raman scattering |
| 001A62 (1997-11-10) |
| Intraband absorption in n-doped InAs/GaAs quantum dots |
| 001A73 (1997-10-01) |
| Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots |
