| 000487 (2008) |
| Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD |
| 000857 (2006) |
| Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots |
| 000A08 (2005) |
| Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection |
| 000C52 (2003-03-17) |
| Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range |
| 000D61 (2003) |
| Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser |
| 001419 (2000) |
| Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates |
| 001668 (1999) |
| Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm |
| 001820 (1998-10-15) |
| Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP |
| 001A63 (1997-11-10) |
| Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100) |
| 000274 (2010) |
| QD laser on InP substrate for 1.55 μm emission and beyond |
| 000740 (2006) |
| Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement |
| 000844 (2006) |
| Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors |
| 000F28 (2002) |
| Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots |
| 001568 (1999-05-31) |
| Wavelength tuning of InAs quantum dots grown on (311)B InP |
| 001586 (1999-03-22) |
| Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate |
| 001750 (1999) |
| Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch |
| 001998 (1998) |
| High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm |
| 000465 (2009) |
| Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL |
| 000887 (2005) |
| Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys |
| 000C23 (2003-08-15) |
| Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells |
| 000D65 (2003) |
| Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy |
| 000F50 (2002) |
| Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission |
| 001109 (2001-03-19) |
| Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm |
| 001513 (1999-11-29) |
| Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates |
| 002A26 (1991) |
| GaPSb : a new ternary material for Schottky diode fabrication on InP |
| 000382 (2009) |
| Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model |
| 000546 (2008) |
| Lasing spectra of 1.55 pm InAs/InP quantum dot lasers : theoretical analysis and comparison with the experiments |
| 000682 (2007) |
| First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer |
| 000713 (2007) |
| Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization |
| 000737 (2006) |
| Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm |
| 000738 (2006) |
| Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm) |
| 000739 (2006) |
| Régime impulsionnel 300fs, 100 pJ, autodémarrant généré par un laser à fibre Er3+ avec absorbant saturable InGaAs/InP dopés fer ultrarapide |
| 000742 (2006) |
| Génération d'impulsions courtes dans un laser à fibre dopée erbium grâce à la combinaison d'un absorbant saturable rapide et d'effets de polarisation |
| 000780 (2006) |
| Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited |
| 000835 (2006) |
| Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber |
| 000855 (2006) |
| Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers |
| 000929 (2005) |
| Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates |
| 000976 (2005) |
| Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates |
| 000D54 (2003) |
| In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP |
| 001013 (2002) |
| Formation of 3D InAs quantum dots on InP substrate |
| 001018 (2002) |
| Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates |
| 001093 (2001-06-25) |
| High-speed 1.55 μm Fe-doped multiple-quantum-well saturable absorber on InP |
| 001099 (2001-05-14) |
| Wetting layer carrier dynamics in InAs/InP quantum dots |
| 001918 (1998) |
| The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system |
| 001B14 (1997-06-30) |
| Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm |
| 001B42 (1997-03-24) |
| Photorefractive multiple quantum well device using quantum dots as trapping zones |
| 001D21 (1997) |
| photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity |
| 001D87 (1996-06-17) |
| Photorefractive p-i-n diode quantum well operating at 1.55 μm |
| 001E72 (1996) |
| Structural aspects of the growth of InAs islands on InP substrate |
| 002018 (1995-09-25) |
| Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy |
| 002178 (1995) |
| Fast photorefractive materials using quantum wells |
| 002650 (1993) |
| InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy |
| 002907 (1992) |
| Electrical behavior of Yb ion in p- and n-type InP |
| 002A38 (1991) |
| Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP) |
| 002B15 (1990) |
| Pseudomorphic GaInP Schottky diode and MSM detector on InP |
| 002B37 (1990) |
| Low-temperature DC characteristics of pseudomorphic Ga0.18In0.82P/InP/Ga0.47In0.53As HEMT |
| 002B77 (1990) |
| Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors |
| 002C43 (1989) |
| Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP |
| 002D47 (1988) |
| Schottky and field-effect transistor fabrication on InP and GalnAs |
| 002E07 (1988) |
| Erbium implanted in III-V materials |
| 002E11 (1988) |
| Electrical activity of Yb in InP |
| 002E26 (1988) |
| Behaviour of erbium implanted in InP |
| 002E90 (1987) |
| Residual defect center in GaInAs/InP films grown by molecular beam epitaxy |
| 002F11 (1987) |
| Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy |
| 000176 (2011) |
| Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications |
| 000272 (2010) |
| Reliability of high voltage/high power L/S-band Hbt technology |
| 000440 (2009) |
| InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes |
| 000467 (2009) |
| Critical thickness for InAs quantum dot formation on (311)B InP substrates |
| 000724 (2007) |
| Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation |
| 000734 (2007) |
| 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser |
| 001570 (1999-05-17) |
| Spatial modulation of the dielectric function using free carriers and/or coherent effects in quantum-well semiconductor microcavity |
| 001593 (1999-02-01) |
| Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy |
| 001697 (1999) |
| Multiple quantum well optically addressed spatial light modulators operating at 1.55 μm with high diffraction efficiency and high sensitivity |
| 001D70 (1996-08-12) |
| Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy |
| 001F41 (1996) |
| Feasibility of 1.5 μm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system |
| 001F48 (1996) |
| Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well |
| 002071 (1995-02-15) |
| Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP |
| 002072 (1995-02-15) |
| High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions |
| 002080 (1995-01-02) |
| Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures |
| 002118 (1995) |
| Stability of (114) and (114¯) facets in III-V compounds under usual MBE conditions |
| 002123 (1995) |
| Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices |
| 002165 (1995) |
| Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy |
| 002398 (1994) |
| High resistivity InP :Ti,Be by GSMBE |
| 002562 (1993) |
| Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers |
| 002744 (1993) |
| A new encapsulation method of InP during post implantation annealing |
| 002919 (1992) |
| Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy |
| 002A18 (1991) |
| Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers |
| 002B87 (1990) |
| Characterisation of semi-insulating InP:Fe |
| 002C00 (1990) |
| 40 GHz measurement on InP/air gap line by picosecond electro-optic sampling |
| 002C01 (1990) |
| 2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy |
| 002C17 (1989) |
| Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation |
| 002C48 (1989) |
| Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment |
| 002E13 (1988) |
| Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates |
| 002E94 (1987) |
| Properties of InP doped with Led ions |
| 002F01 (1987) |
| Nondiffusion and 1•54 μm luminescence of erbium implanted in InP |
| 002F19 (1987) |
| GalnAs junction fet fully dry etched by metal organic reactive ion etching technique |
| 002F85 (1986) |
| The donor level of vanadium in InP |
| 003000 (1986) |
| Properties of titanium in InP |
