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Serveur d'exploration sur l'Indium

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Le cluster D. Theron - Y. Crosnier

Terms

19D. Theron
16Y. Crosnier
23M. Zaknoune
5S. Piotrowicz
13C. Gaquiere
13D. Ferre
28Y. Cordier
7Y. Druelle

Associations

Freq.WeightAssociation
110.631D. Theron - Y. Crosnier
130.622D. Theron - M. Zaknoune
50.559S. Piotrowicz - Y. Crosnier
80.555C. Gaquiere - Y. Crosnier
80.509C. Gaquiere - D. Theron
110.433M. Zaknoune - Y. Cordier
100.524D. Ferre - Y. Cordier
80.417M. Zaknoune - Y. Crosnier
50.357Y. Cordier - Y. Druelle
70.303D. Theron - Y. Cordier
Documents par ordre de pertinence
001991 (1998) InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
001494 (2000) 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001715 (1999) Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001787 (1999) 0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001726 (1999) High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001A29 (1998) Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure
000954 (2005) High performances of InP channel power HEMT at 94 GHz
000A22 (2005) 94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001788 (1999) 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001898 (1998-01) Nonselective wet chemical etching of GaAs and AlGaInP for device applications
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
001997 (1998) High power added efficiency at 35GHz on InP DH HEMTs
001B70 (1997) Etude de la détermination de schémas équivalents de transistors sur InP pour la conception d'amplificateurs de puissance à 60 GHz
002451 (1994) 1W/mm power pseudomorphic HFET with optimised recess technology
002727 (1993) Characterization of GaAs and InGaAs double-quantum well heterostructure FET's
000B78 (2004) Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000D34 (2003) Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000D42 (2003) Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001059 (2001-12-01) Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001251 (2001) Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001259 (2001) Effects of mismatch strain and alloy composition on the formation of inas islands on InAIAs templates : Special issue papers
001271 (2001) Comparison of InAs islands self-assembled on pseudomorphic and metamorphic InAlAs buffer layers grown on GaAs substrate
001322 (2000-09) Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
001376 (2000) Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001441 (2000) High-power GaN MESFET on sapphire substrate
001453 (2000) Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001624 (1999) HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001719 (1999) InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001884 (1998-03) Bromine/methanol wet chemical etching of via holes for InP microwave devices
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate
002846 (1992) Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realization
002A92 (1990) Ultra high transconductance 0•25 μm gate MESFET with strained InGaAs buffer layer
000126 (2012) Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000143 (2012) 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000318 (2010) Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000495 (2008) Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000598 (2008) Ballistic nanodevices for high frequency applications
000666 (2007) MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000730 (2007) AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000827 (2006) Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
000A13 (2005) CBr4 and be heavily doped InGaAs grown in a production MBE system
000C47 (2003-04-01) Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000E58 (2002-06-03) Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
001267 (2001) Determination of the composition of coherently strained islands by transmission electron microscopy
001287 (2001) A 0.15-μm 60-Ghz high-power composite channel GaInAs/InP HEMT with low gate current
001569 (1999-05-24) Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
001D31 (1996-12) Croissance par épitaxie par jets moléculaires d'hétérostructures à dopage planaire pour application aux transistors HEMT
001E30 (1996-02-01) Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field
002570 (1993) Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
002B82 (1990) Depletion and enhancement modes in InP MISFETs for power amplification
Wicri

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