Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster M. Erman - M. Renaud

Terms

17M. Erman
20M. Renaud
6J. A. Cavailles
7J. Le Bris
6P. Jarry
8J. F. Vinchant

Associations

Freq.WeightAssociation
120.651M. Erman - M. Renaud
60.594J. A. Cavailles - M. Erman
60.548J. A. Cavailles - M. Renaud
60.507J. Le Bris - M. Renaud
50.495M. Erman - P. Jarry
60.474J. F. Vinchant - M. Renaud
50.456M. Renaud - P. Jarry
50.429J. F. Vinchant - M. Erman
Documents par ordre de pertinence
002843 (1992) Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP
002995 (1991) Optical circuits and integrated detectors
002B43 (1990) Integration of detectors with GaInAsP/InP carrier depletion optical switches
002873 (1992) InP/GaInAsP guided-wave phase modulators based on carrier-induced effects : theory and experiment
002A31 (1991) First digital optical switch based on InP/GaInAsP double heterostructure waveguides
002384 (1994) Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides for guided-wave photonic integrated circuits
002649 (1993) InP digital optical swithc: key element for guided-wave photonic switching
002852 (1992) Low driving voltage or current digital optical switch on InP for multiwavelength system applications
002933 (1992) Accurate determination of waveguide-fed p-i-n photodiode absorption
002958 (1991) Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518
002B07 (1990) Spatially-resolved photoluminescence study of InP : Fe substrates from different suppliers
002C84 (1989) Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence
000F52 (2002) Optical packet switching with lossless 16-channel InP monolithically integrated wavelength selector module
002E84 (1987) Spatially resolved ellipsometry for semiconductor process control: applicatin to GaInAs MIS structures
001A05 (1998) Four-channel wavelength selector monolithically integrated on InP
001E69 (1996) Study on the reliability of an InP/InGaAsP integrated laser modulator
001F66 (1996) Chemical beam etching of InP in GSMBE
002452 (1994) 16channel phased array wavelength demultiplexer on InP with low polarisation sensitivity
002696 (1993) Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y/InP grown by gas source molecular beam epitaxy
002A61 (1991) Correlation between electrical and structural characterization of In0.5.Ga0.47As/Si3N4 interfaces on MIS structures
002B86 (1990) Chemical and structural analysis by ellipsometry and x-ray reflectometry of thin sulfide layers grown on InP
002C75 (1989) Extremely low loss InP/GalnAsP RIB waveguides
002D56 (1988) Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method
002D69 (1988) Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate
002D98 (1988) Ga0.47In0.53As depletion mode MISFETs with negligible drain current drift
002F26 (1987) Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomography
002F63 (1986) Réalisations de jonctions Y et de branchements X : réalisation et test de lames semi-réfléchissantes. Modélisation et comparaison des performances
002F89 (1986) Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructures
003023 (1986) Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024