Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster H. Dumont - L. Auvray

Terms

12H. Dumont
7L. Auvray
10J. Bouix
9J. Dazord
12V. Souliere
32Y. Monteil

Associations

Freq.WeightAssociation
60.655H. Dumont - L. Auvray
60.632J. Bouix - J. Dazord
50.630J. Dazord - L. Auvray
100.559J. Bouix - Y. Monteil
120.612V. Souliere - Y. Monteil
60.548J. Bouix - V. Souliere
60.548H. Dumont - J. Bouix
100.510H. Dumont - Y. Monteil
50.481H. Dumont - J. Dazord
80.471J. Dazord - Y. Monteil
70.468L. Auvray - Y. Monteil
Documents par ordre de pertinence
001571 (1999-05-15) Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001648 (1999) Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001647 (1999) Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001729 (1999) Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
000B54 (2004) Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D06 (1997) Behaviour of vicinal InP surfaces grown by MOVPE : exploitation of AFM images
000B89 (2004) Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000D18 (2003) Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response
001455 (2000) Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
002743 (1993) A new organoindium precursor for electronic materials
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
000268 (2010) Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000B33 (2004) Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells
001414 (2000) Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001694 (1999) NO2 sensor based on InP epitaxial thin layers
001714 (1999) Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001B94 (1997) The strength of indium phosphide based microstructures
001D14 (1997) Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile : Application to an InP/Ga0.47In0.53As/InP single quantum well
002007 (1995-10-15) Misorientation effect on the monolayer terrace topography of (100) InP substrates annealed under a PH3/H2 ambient and homoepitaxial layers grown by metalorganic chemical vapor deposition
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000362 (2010) AES, LEED and PYS investigation of Au deposits on InSe/Si( 1 1 1) substrate
000428 (2009) Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
000498 (2008) Study by EELS and EPES of the stability of InPO4/InP system
000607 (2008) AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
000A59 (2004) Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
000C87 (2003) Surface and self-organisation of III-V thin films for optoelectronics: Influence of surface orientation and strain on growth mechanisms
001848 (1998-07-01) A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001F58 (1996) Effects of the electron beam on InP(100)
002041 (1995-07) E.P.V.O.M. de InP ― Epitaxie à partir d'un nouveau précurseur de l'indium ― Etude de l'interface InP/InP et des défauts de surface
002067 (1995-03) Etude de nouveaux précurseurs pour l'épitaxie par jets chimiques
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024