Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster B. Theys - J. Chevallier

Terms

16B. Theys
14J. Chevallier
35E. V. K. Rao
10H. Thibierge
12P. Krauz
12M. Juhel

Associations

Freq.WeightAssociation
100.668B. Theys - J. Chevallier
90.380B. Theys - E. V. K. Rao
70.374E. V. K. Rao - H. Thibierge
50.244E. V. K. Rao - P. Krauz
50.244E. V. K. Rao - M. Juhel
50.226E. V. K. Rao - J. Chevallier
Documents par ordre de pertinence
001C76 (1997) Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001938 (1998) Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001956 (1998) Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001A84 (1997-09-29) Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
002074 (1995-02-06) Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio
002077 (1995-01-23) New encapsulant source for III-V quantum well disordering
002210 (1995) An optical study of interdiffusion in strained InP-based heterostructures
002655 (1993) Highly thermally stable electrical compensation in oxygen implanted p-InAlAs
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
000A97 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
001722 (1999) Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001A74 (1997-10-01) Channel optical waveguides formed by deuterium passivation in GaAs and InP
001D68 (1996-08-15) Transport properties of hydrogenated p-GaInAs doped with carbon
002000 (1995-11-01) Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration
002146 (1995) Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
002A19 (1991) Hydrogenation of InAs on GaAs heterostructures
002A57 (1991) Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP : an explanation of low Be acceptor activity
002B53 (1990) Hydrogen neutralization of acceptors in highly doped GaInAs:Zn
002C69 (1989) Hydrogen passivation of shallow acceptors in p-type InP
002F42 (1987) Defect-induced compensation in the bulk of implanted indium phosphide
003044 (1986) Anneal behavior of Zn acceptor implanted In0.53Ga0.47As layers: a study of carrier distributions
000390 (2009) Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy
000D82 (2003) Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers
000E38 (2002-08-26) Simple method to diagnose the performance of electroabsorption modulators on InP using optical low-coherence reflectometry
000E65 (2002-05-13) Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistors
001268 (2001) Detection and localization of degradation damaged regions in 1.3 μm laser diodes on InP using low-coherence reflectometry
001670 (1999) Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001A26 (1998) CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001B52 (1997-01-06) 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy
001B96 (1997) The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources
001C11 (1997) Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
001D13 (1997) AlGaAsSb/AlAsSb microcavity designed for 1.55 μm and grown by molecular beam epitaxy
001D34 (1996-11-11) Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm
001D40 (1996-11) High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
001E08 (1996-05) Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture
001F28 (1996) Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002209 (1995) Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier
002375 (1994) Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators
002675 (1993) Experimental study of the hydrogen complexes in indium phosphide
002708 (1993) Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions
002971 (1991) Temperature influence on the damage induced in Si+-implanted InP
002A12 (1991) Interfacial-band discontinuities for strained layers on InxGa1-x as grown on (100) GaAs
002A16 (1991) Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002A17 (1991) In situ thermal annealing of InP amorphous layer induced by Si+ implantation
002A22 (1991) High resolution electron microscopy study of damage created in Si-implanted InP
002B42 (1990) Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation
002B50 (1990) In situ defect studies on Si+ implanted InP
002B85 (1990) Chemical beam epitaxy of indium phosphide
002C38 (1989) Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
002D60 (1988) Photoelectrochemical measurement of effective diffusion length of carriers in lamellar semiconductors. Application to InSe
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium
002F90 (1986) Solid phase epitaxial regrowth of ion-implanted amorphized InP
003075 (1985) Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing
003096 (1984) Surface accumulation of manganese in Si+-implanted and annealed semi-insulating indium phosphide
003120 (1984) Comparative study of phonon modes in Ga1-xInxP and GaAsxP1-x alloys
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024