Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster L. Porte - P. Krapf

Terms

13L. Porte
6P. Krapf
22Y. Robach
11J. Joseph

Associations

Freq.WeightAssociation
60.679L. Porte - P. Krapf
110.650L. Porte - Y. Robach
60.522P. Krapf - Y. Robach
80.514J. Joseph - Y. Robach
Documents par ordre de pertinence
001933 (1998) Strain effect on the growth of 3D In(Ga)As wire structures on InP(001)
001A72 (1997-10-15) Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001)
001B35 (1997-04-15) Role of the step curvature in the stabilization of coherently strained epitaxial structures
001C50 (1997) Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP
001E80 (1996) Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP
002203 (1995) Connection of a scanning tunneling microscope with a molecular beam epitaxy chamber and analysis of the vibration isolation system
001385 (2000) Strained InAs nanostructures self-organised on high-index InP(113)B
001857 (1998-07) Layer by layer growth mode stabilization and step-edge smoothing of cation-stabilized In1-xGaxAs strained layers grown on InP
001924 (1998) Surface spinodal decomposition in low temperature Al048In052As grown on InP(001) by molecular beam epitaxy
002200 (1995) Correlations between the electrical characteristics of metal-oxide-InP tunnel diodes and the nature of thin interfacial oxides
002538 (1993) Surface investigation by scanning tunneling microscopy in liquid medium
002651 (1993) In situ studies of the anodic oxidation of indium phosphide
002823 (1992) Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices
002892 (1992) Growth of passivating UV/ozone oxides on InP : correlations between chemical composition and intefacial electrical properties
002898 (1992) Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution
002C09 (1989) Propriétés électriques des structures MIS sur InP passivé par un oxyde
002D63 (1988) Optical properties of native oxides on InP
003007 (1986) New native oxide of InP with improved electrical interface properties
003063 (1985) On the nature of oxides on InP surfaces
000237 (2011) Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
000A76 (2004) Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system
000A85 (2004) STM and FIB nano-structuration of surfaces to localise InAs/InP(0 0 1) quantum dots
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
002023 (1995-09-01) Evidence for inhomogeneous growth rates in partially relaxed InGaAs/InP heterostructures
002A39 (1991) Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP
002C88 (1989) Anodic oxidation of InP in pure water
002E83 (1987) Spectroellipsometric study of the electrochemical modification of InP
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024