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Serveur d'exploration sur l'Indium

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Le cluster J. Meddeb - M. B. Derbali

Terms

5J. Meddeb
5M. B. Derbali
17P. Abraham
9M. Sacilotti

Associations

Freq.WeightAssociation
51.000J. Meddeb - M. B. Derbali
50.542M. B. Derbali - P. Abraham
50.542J. Meddeb - P. Abraham
60.485M. Sacilotti - P. Abraham
Documents par ordre de pertinence
001371 (2000) Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates
001382 (2000) Structural and optical characterization of self-assembled GaInAs islands grown on A1InAs/InP (113) surfaces
001848 (1998-07-01) A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001C26 (1997) Optical properties of InP epilayers grown on (111)B GaP substrates by metalorganic chemical vapor deposition
001C30 (1997) Optical characterization of highly mismatched InP/GaAs(111)B epitaxial heterostructures
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
002136 (1995) Photoluminescence and band offsets of AlInAs/InP
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002743 (1993) A new organoindium precursor for electronic materials
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D14 (1997) Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile : Application to an InP/Ga0.47In0.53As/InP single quantum well
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
002014 (1995-10) Etude du triméthylarsenic comme alternative à l'arsine pour l'Epitaxie en Phase Vapeur aux OrganoMétalliques de semiconducteurs III-V sur substrats InP
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
002A50 (1991) Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
002D43 (1988) Silver on phosphorus-passivated (100) InP. Interface formation and microstructure
003107 (1984) Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure
Wicri

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