| 001A44 (1998) |
| 4f-4f intensities of the Tm3+ ions in fluoroindate glasses : the influence of third-order effects through odd intensity parameters |
| 000066 (2013) |
| Effect of the Ag deposition rate on the properties of conductive transparent MoO3/Ag/MoO3 multilayers |
| 000226 (2011) |
| Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors |
| 000276 (2010) |
| Preparation and characterization of flash-evaporated CuLnSe2/CuGaSe2 thin films |
| 000528 (2008) |
| On the improvement of the efficiency of organic photovoltaic cells by the presence of an ultra-thin metal layer at the interface organic/ITO |
| 000693 (2007) |
| Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide |
| 000764 (2006) |
| Structure of the quaternary alloy Zn0.6Mn0.4In2S4 from synchrotron powder diffraction and electron transmission microscopy |
| 000998 (2005) |
| Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime |
| 000A99 (2004) |
| Photoluminescence and photodissociation properties of pure and In2O3 doped ZnO nanophases |
| 000D35 (2003) |
| Metallic magnetoconductivity in copper gallium telluride |
| 001071 (2001-10-15) |
| Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2 |
| 001364 (2000) |
| Caractérisation électrique et optique du diseleniure de cuivre et d'indium |
| 001409 (2000) |
| Phase transitions and ionic transport in K3InF6 |
| 001771 (1999) |
| Application of standard and modified Judd-Ofelt theories to thulium doped fluoroindate glass |
| 000003 (2014) |
| Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells |
| 000014 (2013) |
| The use of a cation exchange resin for palladium-tin and palladium-indium catalysts for nitrate removal in water |
| 000023 (2013) |
| Spatial modulation of above-the-gap cathodoluminescence in InP nanowires |
| 000027 (2013) |
| Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors |
| 000042 (2013) |
| Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers |
| 000044 (2013) |
| MoO3/CuI hybrid buffer layer for the optimization of organic solar cells based on a donor-acceptor triphenylamine |
| 000053 (2013) |
| Highly flexible, conductive and transparent MoO3/Ag/MoO3 multilayer electrode for organic photovoltaic cells |
| 000086 (2012) |
| Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique |
| 000087 (2012) |
| The effect of the active layer thickness on the performance of pentacene-based phototransistors |
| 000096 (2012) |
| Structural, electronic and vibrational properties of InN under high pressure |
| 000110 (2012) |
| Nanostructured thermally evaporated CuInSe2 thin films synthesized from mechanically alloyed powders and self-combustion ingot |
| 000153 (2011) |
| Thermodynamic assessment of the In-Ir system in the In rich part |
| 000169 (2011) |
| Study of polycrystalline bulk CuIn1-xGaxTe2 |
| 000170 (2011) |
| Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effect |
| 000178 (2011) |
| Simulation approach for studying the performances of original superstrate CIGS thin films solar cells |
| 000183 (2011) |
| Preparation and electrochemical behaviour of PPy-CdS composite films |
| 000194 (2011) |
| Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes |
| 000202 (2011) |
| Localized surface plasmon resonance interfaces coated with poly[3-(pyrrolyl) carboxylic acid] for histidine-tagged peptide sensing |
| 000233 (2011) |
| Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C60 couple |
| 000242 (2011) |
| CHARACTERISATION OF TiO2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION |
| 000252 (2010) |
| Elaboration et caractérisation des matériaux binaires CuxS et Ag2S élaborés par la technique SILAR pour couche tampon de cellule solaire à base de couche absorbante CIS |
| 000256 (2010) |
| Transparent pentacene-based photoconductor: high photoconductivity effect |
| 000282 (2010) |
| Photoluminescence and energy transfer of Tm3+ doped LiIn (WO4)2 blue phosphors |
| 000287 (2010) |
| Organic optoelectronic devices-flexibility versus performance |
| 000291 (2010) |
| On the anomalous Stark effect in a thin disc-shaped quantum dot |
| 000306 (2010) |
| Influence of anode roughness and buffer layer nature on organic solar cells performance |
| 000338 (2010) |
| Development of New Localized Surface Plasmon Resonance Interfaces Based on Gold Nanostructures Sandwiched between Tin-Doped Indium Oxide Films |
| 000362 (2010) |
| AES, LEED and PYS investigation of Au deposits on InSe/Si( 1 1 1) substrate |
| 000371 (2009) |
| Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor |
| 000372 (2009) |
| Unifying description of the optical properties of InN from first principles |
| 000392 (2009) |
| Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells |
| 000424 (2009) |
| Low temperature magnetism of Cd-doped Ce2RhIn8 heavy fermion antiferromagnet |
| 000428 (2009) |
| Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound |
| 000445 (2009) |
| High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe |
| 000453 (2009) |
| Experimental study of the ternary Ag-Cu-In phase diagram |
| 000462 (2009) |
| Effect of oxygen partial pressure on the structural and optical properties of dc sputtered ITO thin films |
| 000463 (2009) |
| Effect of bath temperature and annealing on the formation of CuInSe2 |
| 000483 (2008) |
| Ultra-thin metal layer passivation of the transparent conductive anode in organic solar cells |
| 000497 (2008) |
| Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies |
| 000498 (2008) |
| Study by EELS and EPES of the stability of InPO4/InP system |
| 000597 (2008) |
| CROSSOVER PHENOMENON FOR VARIABLE RANGE HOPPING CONDUCTION AND POSITIVE MAGNETORESISTANCE IN INSULATING N-TYPE InP |
| 000607 (2008) |
| AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment |
| 000618 (2007) |
| The surfactant addition effect in the elaboration of electrodepositated NiP-SiC composite coatings |
| 000621 (2007) |
| Synthesis, characterization, and catalytic activity in the n-heptane conversion over Pt/In-Al2O3 sol-gel prepared catalysts |
| 000622 (2007) |
| Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films |
| 000636 (2007) |
| Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice |
| 000649 (2007) |
| Numerical simulation of CuInxGa1-xSe2 solar cells by AMPS-1D |
| 000691 (2007) |
| Electrical and optical characterisation of CuInS2 crystals and polycrystalline coevaporated thin films |
| 000694 (2007) |
| Effect of annealing on In2S3 thin films prepared by flash evaporation |
| 000698 (2007) |
| Dielectric properties of flash : evapored CuInSe2 photovoltaic thin films |
| 000703 (2007) |
| DC and high-frequency conductivity of CuInSe2 bulk crystals |
| 000710 (2007) |
| Comparative study of sputtered and electrodeposited CI(S, Se) and CIGSe thin films |
| 000714 (2007) |
| Characterisation of porous doped ZnO thin films deposited by spray pyrolysis technique |
| 000777 (2006) |
| Simultaneous determination of species by Differential Alternative Pulses Voltammetry |
| 000784 (2006) |
| Physical properties of RF sputtered ITO thin films and annealing effect |
| 000795 (2006) |
| Nitridation of InP(1 0 0) substrates studied by XPS spectroscopy and electrical analysis |
| 000798 (2006) |
| Modelling and simulation of InGaP solar cells under solar concentration : Series resistance measurement and prediction |
| 000799 (2006) |
| Meta-GGA calculation of the electronic structure of group III-V nitrides |
| 000813 (2006) |
| Influence of Mn on the properties of γ-In2Se3:Mn films |
| 000824 (2006) |
| Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN |
| 000825 (2006) |
| Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk |
| 000832 (2006) |
| Fabrication and characterisation of CuInSe2/Si(1 0 0) thin films by the stacked elemental layer (SEL) technique |
| 000839 (2006) |
| Electrical and optical study of Cu(In, Ga)Se2 co-evaporated thin films |
| 000909 (2005) |
| Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices |
| 000926 (2005) |
| Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure |
| 000950 (2005) |
| Hyperfine interactions and site occupancy in Sn-doped In2O3 (ITO) |
| 000964 (2005) |
| First-principles study of cubic AlxGa1-xN alloys |
| 000984 (2005) |
| Elastic waves at the (001) and (110) surfaces of AlN, GaN and InN |
| 000992 (2005) |
| Diffusion of Zn in CuInSe2 bulk crystals |
| 000A54 (2004) |
| Anisotropie de la relaxation élastique d'un réseau bipériodique de dislocations enterrées : Théorie et application aux bicristaux de semi-conducteurs |
| 000A63 (2004) |
| Thermodynamic optimization of the In-Pb-Sn system based on new evaluations of the binary borders In-Pb and In-Sn |
| 000A78 (2004) |
| Spectroscopic ellipsometry characterization of ZnO-In2O3 systems |
| 000A82 (2004) |
| Sequence of structural phase transitions of CsInF4 crystal |
| 000A93 (2004) |
| Preparation and characterization of (CuInSe2)1-x(CoSe)x alloys in the composition range 0 ≤ x ≤ 2/3 |
| 000B12 (2004) |
| Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN |
| 000B34 (2004) |
| Interfacial stress field generate by a biperiodic hexagonal network of misfit dislocations in a thin bicristal InAs/(111)GaAs |
| 000B47 (2004) |
| Growth of silicon thin film by LPE on porous silicon bilayers |
| 000B62 (2004) |
| Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis |
| 000B80 (2004) |
| Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma |
| 000B85 (2004) |
| Analysis of the behaviour of magnitude m with magnetic field in corrective term "mT1/2" of the metallic electrical conductivity in n-type InP |
| 000C67 (2003) |
| Nouvelles compositions stables de verres fluores à base d'indium |
| 000C78 (2003) |
| Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1-xGaxAsySb1-y epilayer on GaSb and InAs |
| 000C83 (2003) |
| The Ag-Bi-In system: enthalpy of formation |
| 000C89 (2003) |
| Study and improvement of interfacial properties in a MIS structure based on p-type InP |
| 000D09 (2003) |
| Positive and negative magnetoresistance on both sides of the metal-insulator transition in metallic n-type InP |
| 000D15 (2003) |
| Phase diagram of the Pb-PbSe-InSe-In subsystem |
