| 000315 (2010) |
| HELIOS: pHotonics ELectronics functional Integration on CMOS |
| 000A47 (2004-01-15) |
| Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering |
| 000018 (2013) |
| Surface electronic structure of InSb(001)-c(8 × 2) |
| 000150 (2011) |
| Time resolved spectroscopy on quantum dots and graphene at the FELBE free-electron laser |
| 000259 (2010) |
| Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser |
| 000411 (2009) |
| Optical, structural investigations and band-gap bowing parameter of GaInN alloys |
| 000421 (2009) |
| MOVPE growth of InN buffer layers on sapphire |
| 000438 (2009) |
| InN excitonic deformation potentials determined experimentally |
| 000452 (2009) |
| Growth of InN films and nanostructures by MOVPE |
| 000474 (2009) |
| Alternative precursors for MOVPE growth of InN and GaN at low temperature |
| 000502 (2008) |
| Statistics of quantum dot exciton fine structure splittings and their polarization orientations |
| 000662 (2007) |
| Magnetic structures and crystal field in the heavy electron materials YbAgGe and YbPtIn |
| 000804 (2006) |
| Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments |
| 000921 (2005) |
| Observation of structural anisotropy and the onset of liquidlike motion during the nonthermal melting of InSb |
| 000A11 (2005) |
| Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells |
| 000D41 (2003) |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000F32 (2002) |
| Real examples of surface reconstructions determined by direct methods |
| 000F73 (2002) |
| Models and measurements for the transmission of submicron-width waveguide bends defined in two-dimensional photonic crystals : Feature section on photonic crystal structures and applications |
| 000008 (2013) |
| Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals |
| 000026 (2013) |
| Red-blue effect in Cu(In,Ga)Se2-based devices revisited |
| 000081 (2012) |
| Why MnIn2O4 spinel is not a transparent conducting oxide? |
| 000125 (2012) |
| High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys |
| 000132 (2012) |
| E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods |
| 000146 (2011) |
| Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires |
| 000161 (2011) |
| Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs |
| 000180 (2011) |
| Recent status and prospects of the EU-funded ALPINE project |
| 000212 (2011) |
| Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds |
| 000235 (2011) |
| Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe |
| 000250 (2011) |
| 1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings |
| 000253 (2010) |
| [11]Anthrahelicene on InSb(001 ) c(8x2): A Low-Temperature Scanning Probe Microscopy Study |
| 000265 (2010) |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
| 000278 (2010) |
| Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast |
| 000288 (2010) |
| Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials |
| 000289 (2010) |
| Optical properties of InN grown on Si(111) substrate |
| 000292 (2010) |
| Non-vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers |
| 000316 (2010) |
| Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition |
| 000334 (2010) |
| Effects of La, Nd and Sm substitution of Sr in Sr2CrRe06 on the structural, magnetic and transport properties |
| 000353 (2010) |
| Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments |
| 000382 (2009) |
| Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model |
| 000397 (2009) |
| Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model |
| 000401 (2009) |
| Silicon Photonics Developments in Europe |
| 000406 (2009) |
| Relation between photocurrent and DLTS signals observed for quantum dot systems |
| 000416 (2009) |
| Nanocrystal Growth in Cordierite Glass Ceramics Studied with X-ray Scattering |
| 000417 (2009) |
| Monolithic integration of InP-based transistors on Si substrates using MBE |
| 000451 (2009) |
| Growth of thin polymer films containing side-chain azo-dye analyzed by atomic force microscopy |
| 000493 (2008) |
| Terahertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels : Heterostructure Terahertz Devices |
| 000504 (2008) |
| Sol-gel processed ionic liquid -hydrophilic carbon nanoparticles multilayer film electrode prepared by layer-by-layer method |
| 000533 (2008) |
| New hints on the origin of quantum criticality in CeCoIn5: A Hall effect study |
| 000546 (2008) |
| Lasing spectra of 1.55 pm InAs/InP quantum dot lasers : theoretical analysis and comparison with the experiments |
| 000555 (2008) |
| Integrated wavelength monitoring in a photonic-crystal tunable laser diode |
| 000586 (2008) |
| Diode laser atomic fluorescence temperature measurements in low-pressure flames |
| 000638 (2007) |
| Photoinduced electrooptics in the In2O3 nanocrystals incorporated into PMMA matrixes |
| 000806 (2006) |
| Ion transfer processes at the room temperature ionic liquid|aqueous solution interface supported by a hydrophobic carbon nanofibers : silica composite film |
| 000808 (2006) |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000823 (2006) |
| Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths |
| 000874 (2005) |
| The magnetic instability of Yb2Pd2(In, Sn) in a non-Fermi liquid environment |
| 000877 (2005) |
| Terahertz generation by plasma waves in nanometer gate high electron mobility transistors |
| 000882 (2005) |
| Study of the influence of the In2O3 loading on γ-alumina for the development of de-NOx catalysts |
| 000895 (2005) |
| Resonant Raman spectroscopy on InN |
| 000922 (2005) |
| Novel coexistence of superconductivity with two distinct magnetic orders |
| 000924 (2005) |
| Nitridation of InP(100) surface studied by synchrotron radiation |
| 000927 (2005) |
| Multiple superconducting phases in heavy fermion superconductors |
| 000945 (2005) |
| Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes |
| 000947 (2005) |
| InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots |
| 000950 (2005) |
| Hyperfine interactions and site occupancy in Sn-doped In2O3 (ITO) |
| 000966 (2005) |
| Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules |
| 000967 (2005) |
| Fermi surface gapping and nesting in the surface phase transition of Sn/Cu(100) |
| 000971 (2005) |
| Experimental study of the solid-liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth |
| 000990 (2005) |
| Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging |
| 000995 (2005) |
| Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation |
| 000A30 (2004-05-07) |
| Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots |
| 000A38 (2004-04) |
| Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence |
| 000A88 (2004) |
| Renewed interest in powder diffraction data indexing |
| 000A94 (2004) |
| Polymer-phthalocyanine composite systems as solid-state passive optical limiters |
| 000A96 (2004) |
| Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells |
| 000B00 (2004) |
| Photoinduced second harmonic generation in the In2O3 crystalline films doped by Al and Sn |
| 000B16 (2004) |
| Microminiature Hall probes based on n-InSB(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T |
| 000B27 (2004) |
| Lithium insertion into In2S3 studied by perturbed γ-γ angular correlation |
| 000B28 (2004) |
| Linewidth enhancement factor in InGaAs quantum-dot amplifiers |
| 000B48 (2004) |
| Growth of ordered poly(ethylene-oxide) thin films from solutions: an SFM study |
| 000B50 (2004) |
| Gd(Mn1-xInx)2: crystal structure and physical properties |
| 000C04 (2003-12-15) |
| Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots |
| 000C24 (2003-08-15) |
| Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys |
| 000C26 (2003-08-15) |
| Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy |
| 000C43 (2003-04-15) |
| Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KH |
| 000C74 (2003) |
| Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities |
| 000C88 (2003) |
| Study of low-energy magnetic excitations in single-crystalline CeIn3 by inelastic neutron scattering |
| 000D17 (2003) |
| Optically-induced non-linear optical effects in indium-tin oxide crystalline films |
| 000D24 (2003) |
| New electronic surface states on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface |
| 000D99 (2003) |
| Beam filamentation and maximum optical power in high brightness tapered lasers |
| 000E14 (2002-12-15) |
| Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface |
| 000E35 (2002-09-01) |
| Effect of pressure on the magnetic properties of U(In1-xSnx)3: Moment suppression in U(In0.6Sn0.4)3 |
| 000E61 (2002-05-15) |
| Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities |
| 000E64 (2002-05-13) |
| New Spectroscopy Solves an Old Puzzle: The Kondo Scale in Heavy Fermions |
| 000F03 (2002) |
| Subterahertz detection by high electron mobility transistors at large forward gate bias |
| 000F39 (2002) |
| Preparation and characterization of In2Se3 thin films |
| 000F67 (2002) |
| Monte Carlo calculations of THz generation in wide gap semiconductors |
| 000F68 (2002) |
| Monte Carlo calculations of THz generation in nitrides |
| 001014 (2002) |
| Formation and characterization of the gallium and indium subhydride molecules Ga2H2 and In2H2: A matrix isolation study |
| 001078 (2001-09-15) |
| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
