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Racine

Serveur d'exploration sur l'Indium

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Le cluster Belgique - Pays-Bas

Terms

49Belgique
30Pays-Bas
15Finlande
15Danemark

Associations

Freq.WeightAssociation
60.156Belgique - Pays-Bas
30.111Belgique - Finlande
20.074Belgique - Danemark
Documents par ordre de pertinence
000180 (2011) Recent status and prospects of the EU-funded ALPINE project
000215 (2011) Heterogeneously Integrated Microdisk Lasers for Optical Interconnects and Optical Logic
000218 (2011) Gravure printed flexible organic photovoltaic modules
000248 (2011) All-optical wavelength conversion using mode switching in InP microdisc laser
000286 (2010) Overview of the EU FP7-project HISTORIC
000314 (2010) High efficient plastic solar cells fabricated with a high-throughput gravure printing method
000315 (2010) HELIOS: pHotonics ELectronics functional Integration on CMOS
000359 (2010) An ultra-small, low-power, all-optical flip-flop memory on a silicon chip
000958 (2005) Growth and characterization of In1-xMnxAs diluted magnetic semiconductors quantum dots
000D71 (2003) Experimental measurements of the ridge spacing influence on the frequency response and optical spectrum of laterally coupled laser diodes
001F76 (1996) All-optical wavelength converters for optical switching applications
000002 (2014) Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
000057 (2013) Flexible transparent conductive materials based on silver nanowire networks: a review
000106 (2012) Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000146 (2011) Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
000189 (2011) On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
000211 (2011) Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models
000220 (2011) Formation of Wurtzite InP Nanowires Explained by Liquid-Ordering
000224 (2011) Evidences of stripe charge and spin ordering in La2NiO4+δ by electron spin resonance
000231 (2011) Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
000254 (2010) Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation
000265 (2010) Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
000274 (2010) QD laser on InP substrate for 1.55 μm emission and beyond
000278 (2010) Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast
000309 (2010) In-clustering effects in InAlN and InGaN revealed by high pressure studies
000312 (2010) High-index-contrast subwavelength grating VCSEL
000336 (2010) Direct Observation of Acoustic Oscillations in InAs Nanowires
000365 (2010) A highly efficient single-photon source based on a quantum dot in a photonic nanowire
000369 (2009) ZrO2-In2O3 thin layers with gradual ionic to electronic composition synthesized by atomic layer deposition for SOFC applications
000389 (2009) Symmetry breaking of ionic semiconductors under pressure: the case of InAs
000401 (2009) Silicon Photonics Developments in Europe
000432 (2009) Integration of InP-based optoelectronics with silicon waveguides
000457 (2009) Er3+-doped Nanoparticles for Optical Detection of Magnetic Field
000506 (2008) Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates
000517 (2008) Porous indium oxide thin films deposited by electrostatic spray deposition technique
000525 (2008) Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applications
000554 (2008) Integration of grating couplers with a compact photonic crystal demultiplexer on an InP membrane
000580 (2008) Electrically injected InP microdisk lasers integrated with nanophotonic SOI circuits
000592 (2008) Compact Optical Modulator based on Carrier Induced Gain of an InP/InGaAsP Micro-disk Cavity Integrated on SOI
000598 (2008) Ballistic nanodevices for high frequency applications
000603 (2008) Andreev Reflection versus Coulomb Blockade in Hybrid Semiconductor Nanowire Devices
000699 (2007) Development of a Si:As blocked impurity band detector for far IR detection
000700 (2007) Design and optimization of a monolithically integratable InP-based optical waveguide isolator
000720 (2007) Ballistic nano-devices for high frequency applications
000732 (2007) A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator
000740 (2006) Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000748 (2006) Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000759 (2006) Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS
000841 (2006) Dwell-time related saturation of phase coherence in ballistic quantum dots
000873 (2005) The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots
000880 (2005) Surface reactivity of insb studied by cyclic voltammetry coupled to xps
000890 (2005) Single-transverse-mode InGaAsP-InP edge-emitting bipolar cascade laser
000920 (2005) Octreotide (long-acting release formulation) treatment in patients with graves' orbitopathy: Clinical results of a four-month, randomized, placebo-controlled, double-blind study
000921 (2005) Observation of structural anisotropy and the onset of liquidlike motion during the nonthermal melting of InSb
000931 (2005) Modeling of a novel InP-based monolithically integrated magneto-optical waveguide isolator
000947 (2005) InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000965 (2005) First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs
000989 (2005) Dwell-time-limited coherence in open quantum dots
000B32 (2004) Intraband relaxation via polaron decay in InAs self-assembled quantum dots
000B55 (2004) Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T
000C25 (2003-08-15) Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
000D77 (2003) Electrochemical preparation of In and Al doped zno thin films for CuInSe2 solar cells
000E09 (2003) A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation
000E15 (2002-12-15) Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
000F32 (2002) Real examples of surface reconstructions determined by direct methods
001075 (2001-10) Indium-Based Interface Chemical Engineering by Electrochemistry and Atomic Layer Deposition for Copper Indium Diselenide Solar Cells
001078 (2001-09-15) Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
001081 (2001-08-15) Structure of metal-rich (001) surfaces of III-V compound semiconductors
001105 (2001-04-16) Subsurface Dimerization in III-V Semiconductor (001) Surfaces
001142 (2001) The dependence of the optical energies on InGaN composition
001193 (2001) Non-thermal melting in semiconductors measured at femtosecond resolution
001479 (2000) Cadmium-free buffer layers deposited by atomic later epitaxy for copper indium diselenide solar cells
001600 (1999-02) Improvement of crystalline quality of 3-inch InP wafers
001638 (1999) Thermal stress simulation and interface destabilisation in indium phosphide grown by LEC process
001660 (1999) Spacecraft potential control aboard Equator-S as a test for Cluster-II
001683 (1999) Optimization of In2O3 transparent conductive films by Ge ion implantation
001761 (1999) Cobalt contacts on indium arsenide
001872 (1998-04-06) Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
001A02 (1998) Growth and characterization of zinc sulfide thin films deposited by the successive ionic layer adsorption and reaction (SILAR) method using complexed zinc ions as the cation precursor
001B97 (1997) The low-frequency impedance of anodically dissolving semiconductor and metal electrodes : A common origin ?
001C64 (1997) Identification of cadmium vacancy complexes in CdTe(In), CdTe(Cl) and CdTe(I) by positron annihilation with core electrons
001C89 (1997) Device-relevant point defects in GaAs and InP
001C96 (1997) Comparison of noise between passivated and unpassivated AlGaAs/GaAs and GaInP/GaAs HBTs
001D34 (1996-11-11) Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm
001D57 (1996-09-01) Suppression of Auger recombination in arsenic-rich InAs1-xSbx strained layer superlattices
001D75 (1996-07-15) Magnetopolaron effect on shallow indium donors in CdTe
001F85 (1995-12-15) Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111)
001F96 (1995-11-15) In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes
002005 (1995-11) Identification of new nuclei at and beyond the proton drip line near the doubly magic nucleus 100Sn
002022 (1995-09-01) Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared
002052 (1995-05-15) Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100)
002071 (1995-02-15) Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP
002297 (1994-04-15) Inverse-photoemission spectroscopy of GaSe and InSe
002306 (1994-03-14) Positron trapping at divacancies in thin polycrystalline CdTe films deposited on glass
002563 (1993) Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm
002577 (1993) Point defects in III-V materials grown by molecular beam epitaxy at low temperature
Wicri

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