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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Valence bands »
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Valence band structure < Valence bands < Value engineering  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]
Ident.Authors (with country if any)Title
000379 (2012) Temperature dependent empirical pseudopotential theory for self-assembled quantum dots
000548 (2012) Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study
000713 (2011) Spin splitting modulated by uniaxial stress in InAs nanowires
000997 (2010) The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
000B70 (2010) Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection
000C87 (2009) The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
000D07 (2009) Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases
000D33 (2009) Strain effect on polarized optical properties of c-plane GaN and m-plane GaN
000E61 (2009) First principles study on the properties of p-type conducting In:SnO2
001219 (2008) Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering
001389 (2007) Growth, structure and electrical properties of mercury indium telluride single crystals
001879 (2004-06-07) Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
001C29 (2003) Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
001C64 (2002-09) Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation
001C75 (2002-07-15) Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells
001E44 (2001-06-15) Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP2 Studied by Polarized Piezoreflectance
001E51 (2001-05-15) Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
001F98 (2000-10) InP (110) by Time-resolved XPS
002149 (1999-12-15) GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy
002165 (1999-10-01) Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment
002200 (1999-02-01) Determination of the valence-band offset for GaInAsSb/InP heterostructure

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