Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Ternary alloys »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Ternary alloy < Ternary alloys < Ternary complex  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000251 (2013) First-principles study on stability, electronic and thermodynamic properties of Ti2Coln and Ti2Niln
000517 (2012) Growth of large-grain Ag-In-Yb icosahedral quasicrystals and approximant crystals
000692 (2011) Synthesis of large single-grain 1/1 approximant crystals in the Ag-In-Eu system by the self-flux method
001001 (2008) The effects of In isoelectronic substitution for Ga on the thermoelectric properties of SrgGa16-xInxGe30 type-I clathrates
001008 (2008) Temperature dependence of the energy bandgap of HgInTe
001508 (2006) Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x-(Bi0.5Sb1.5Te3)1- x (x = 0-1.0) alloys prepared by spark plasma sintering
001932 (2004) The 2/1 cubic approximant of the Ag42In42Ca16 icosahedral quasicrystal
001C21 (2003) Effect of magnetic heat-treatment on magnetic properties and microstructure of Nd10Fe84-xB6Inx(x= 0,1) nanocomposite
001C36 (2003) Calculating models of mass action concentration for metallic melts Ag-In-Sm
001E86 (2001) The Sn-In-Zn system: application of CALPHAD technique to phase diagram mesurement
002494 (1997) Short-wavelength phase-change optical data storage in In-Sb-Te alloy films
002674 (1995-03-15) Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch
002686 (1995-02-01) Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates
002755 (1994-07-15) Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates
002771 (1994-02-01) Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Ternary alloys" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Ternary alloys" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Ternary alloys
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024