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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Surface recombination »
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Surface reactions < Surface recombination < Surface reconstruction  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000733 (2011) Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
001018 (2008) Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
001944 (2004) Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra
001B97 (2003) High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers
001C42 (2003) Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors
002323 (1998-05) Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
002439 (1997-11-01) Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
002450 (1997-07-28) Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Surface recombination" \
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