Stress effects < Stress relaxation < Stress strain relation

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]

Ident.	Authors (with country if any)	Title
000308 (2013)		Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000664 (2011)		Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN
000A68 (2010)		Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays
000B11 (2010)		Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000C23 (2010)		Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009)		The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000D34 (2009)		Strain effect in determining the geometric shape of self-assembled quantum dot
000F34 (2009)		Critical lateral dimension for a nanoscale-patterned heterostructure using the finite element method
001264 (2007)		The influence of internal electric fields on the transition energy of InGaN/GaN quantum well
001484 (2007)		Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
001974 (2004)		Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001A34 (2004)		Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001A92 (2003-06-15)		Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
001D36 (2002)		Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
001E49 (2001-05-15)		Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures
002038 (2000-02-01)		Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002047 (2000)		Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
002072 (2000)		Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure
002125 (2000)		Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
002137 (2000)		Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002195 (1999-03-01)		Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well

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