Strain-compensated quantum cascade (QC) lasers < Strained layer < Strained quantum well

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000683 (2011)		Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
000767 (2011)		Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer
000A39 (2010)		Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm
000A74 (2010)		Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer
000C52 (2010)		1.3 μm InAs/GaAs quantum dots with broad emission spectra
000F05 (2009)		Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F34 (2009)		Critical lateral dimension for a nanoscale-patterned heterostructure using the finite element method
001030 (2008)		Structural characterization of Mn implanted AlInN
001035 (2008)		Strain Engineered Quantum Dots for Long Wavelength Emission
001076 (2008)		Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
001183 (2008)		Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
001410 (2007)		Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
001513 (2006)		Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001603 (2006)		Influence of dislocation stress field on distribution of quantum dots
001610 (2006)		Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
001711 (2005)		The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots
001815 (2005)		GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
001971 (2004)		Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off
001973 (2004)		Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
001A06 (2004)		High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE
001A27 (2004)		Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Strained layer" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Strained layer" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Strained layer
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024