Silicon Oxides < Silicon additions < Silicon carbide

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000E79 (2009)		Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing
000F24 (2009)		Design and epitaxy of structural III-nitrides
001212 (2008)		Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films
001440 (2007)		Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001452 (2007)		Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing
001463 (2007)		Crystal-originated particles in germanium-doped Czochralski silicon crystal
001687 (2006)		Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
001784 (2005)		Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001975 (2004)		Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy
001A24 (2004)		Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
001B39 (2003)		Study on the surface of AlGaInP
001C45 (2003)		Accurate interband-energy measurements from Ellipsometric spectra
001D99 (2002)		Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry
001F22 (2001)		Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy
002072 (2000)		Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure
002081 (2000)		Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
002239 (1999)		Si doping effect on self-organized InAs/GaAs quantum dots
002404 (1998)		Growth and transport properties of InAs thin films on GaAs
002406 (1998)		Growth and doping characteristics of InGaN films grown by low pressure MOCVD
002679 (1995-03)		Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors
002695 (1995)		The near infrared photoluminescence of epitaxial Ga0.5In0.5P

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