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Semiconductor junctions < Semiconductor laser < Semiconductor laser arrays  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000216 (2013) InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
001806 (2005) High-volume production of 650nm GaInP/AlGaInP laser diodes
001835 (2005) Dual wavelength 650-780nm laser diodes
001852 (2005) Applications of ICP in optoelectronic device fabrication
001988 (2004) MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001991 (2004) Large diameter Sn-doped indium phosphide single crystal growth by LEC method
002392 (1998) In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers
002434 (1998) 1.55 μm InGaAsP/InP partially gain-coupled distributed feedback laser / electroabsorption modulator integrated device for trunk line communication
002777 (1994) b and its temperature dependence are the important criteria of the reliability of semiconductor lasers
002785 (1994) Study of pulse compression from 1.5 μm distributed feedback lasers by a Gires-Tournois interferometer
002798 (1994) High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multi-quantum well laser diodes emitting at 676nm
002805 (1994) An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers
002873 (1992) Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers
002914 (1991) A common-cavity two-section InGaAsP/InP bistable laser with a low optical switching power
002926 (1990) Mode-selection characteristic of the symmetrical three-section composite-cavity InGaAsP/InP semiconductor laser
002930 (1990) Hemispherical resonator study for surface-emitting InGaAsP/InP lasers
002946 (1989) Influence of mass-transported layers on threshold current and mode behavior in InGaAsP BH semiconductor lasers
002970 (1987) Effects of energyband structure on the optical gain spectra of InGaAsP quaternary semiconductor
002971 (1987) Effect of carrier leakage through the heterobarrier on the T0 of InGaAsP semiconductor lasers

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