Semiconductor doping < Semiconductor epitaxial layers < Semiconductor fiber ring laser

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]

Ident.	Authors (with country if any)	Title
001872 (2004-06-28)		Investigations on V-defects in quaternary AlInGaN epilayers
001878 (2004-06-15)		20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source
001886 (2004-05-10)		Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
001896 (2004-04-05)		On the origin of spin loss in GaMnN/InGaN light-emitting diodes
001910 (2004-03-01)		Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers
001914 (2004-02-23)		Observation of spontaneous ordering in the optoelectronic material GaInNP
001A54 (2003-12-22)		InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A64 (2003-10-27)		Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)]
001A66 (2003-10-15)		Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
001A68 (2003-10-01)		Optical properties of p-type In-doped SrTiO3 thin films
001A89 (2003-06-23)		Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
001C68 (2002-08-15)		Degree of ordering in Al0.5In0.5P by Raman scattering
001C80 (2002-05-15)		Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement
001C85 (2002-05)		Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
001D02 (2002-02-04)		Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
001E21 (2001-11-15)		Phonon-induced photoconductive response in doped semiconductors
001E26 (2001-10-29)		Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency
001E28 (2001-09-17)		Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
001E30 (2001-09-15)		Charging of embedded InAs self-assembled quantum dots by space-charge techniques
001E53 (2001-04-30)		High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer
001F85 (2000-12-18)		Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Semiconductor epitaxial layers" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Semiconductor epitaxial layers" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Semiconductor epitaxial layers
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024