Serveur d'exploration sur l'Indium - Analysis (Chine)

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Rapid solidification < Rapid thermal annealing < Rapid thermal processing  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]
Ident.Authors (with country if any)Title
000148 (2013) Photoluminescence study of the defect-induced recombination in Cu(In,Ga)Se2 solar cell
000257 (2013) Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks
000728 (2011) Rapid thermal annealing of ITO films
000734 (2011) Printed ethyl cellulose/CuInSe2 composite light absorber layer and its photovoltaic effect
000E52 (2009) Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
000F28 (2009) Densification study of ITO films during high temperature annealing by GISAXS
001212 (2008) Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films
001452 (2007) Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing
001581 (2006) Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
001648 (2006) Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
001658 (2006) Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
001684 (2006) Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001923 (2004) Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
001A58 (2003-11-24) Enhancement of room-temperature photoluminescence in InAs quantum dots
001A69 (2003-10-01) Improving the Performance of AlGaInP Laser Diode by Oxide Annealing
001B29 (2003) The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001C03 (2003) GalnNAs: Growth and characterization
001C76 (2002-07-15) Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer
001C84 (2002-05) High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes
001D04 (2002-02-01) Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer

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