RF systems < RHEED < RKKY interaction

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List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000209 (2013)		Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers
000711 (2011)		Strain accumulation in InAs/InxGa1-xAs quantum dots
000E34 (2009)		InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties
001034 (2008)		Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step
001290 (2007)		Surface morphology of highly mismatched insb films grown on GaAs substrates by molecular beam epitaxy
001518 (2006)		The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content
001580 (2006)		Optical properties of InN films grown by molecular beam epitaxy at different conditions
001595 (2006)		Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001622 (2006)		Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy
001735 (2005)		Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm
001813 (2005)		Growth and characterization of InN on sapphire substrate by RF-MBE
001832 (2005)		Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001886 (2004-05-10)		Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
001922 (2004)		Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
001973 (2004)		Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
001B29 (2003)		The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001B47 (2003)		Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B91 (2003)		In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate
001D61 (2002)		Influence of strain on annealing effects of In(Ga)As quantum dots
002053 (2000)		The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
002103 (2000)		Growth and characterization of high-quality GaInAs/AlInAs triple wells

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