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Quantum computer < Quantum confined Stark effect < Quantum confinement  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000161 (2013) Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000543 (2012) Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000982 (2010) Tunable the emission wavelength of InGaN/GaN multi-quantum wells employing strain-accommodative structures
001217 (2008) Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
001916 (2004-02-16) Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
001A60 (2003-11-10) Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
001A92 (2003-06-15) Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
001C61 (2002-10-01) Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells
001D11 (2002-01-01) Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy
001E60 (2001-03-19) Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots
001E71 (2001-01-15) Persistent photoconductivity in InGaN/GaN multiquantum wells
002000 (2000-09-15) Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
002171 (1999-08-30) Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells
002198 (1999-02-08) Piezoelectric effects in the optical properties of strained InGaN quantum wells

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