Partition coefficient < Passivation < Passive networks

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]

Ident.	Authors (with country if any)	Title
000008 (2014)		Surface state and optical property of sulfur passivated InP
000149 (2013)		Photoluminescence properties of porous InP filled with ferroelectric polymers
000466 (2012)		Microfluidic Platform for the Evaluation of Multi-Glycan Expressions on Living Cells using Electrochemical Impedance Spectroscopy and Optical Microscope
000580 (2012)		Effect of Molecular Passivation on the Doping of InAs Nanowires
000863 (2011)		Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
000868 (2011)		Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy
000944 (2011)		Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium-Zinc-Oxide Electric-Double-Layer TFTs
000C31 (2010)		An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector
000E58 (2009)		First-principles study of indium adsorption on GaP(001)(2 x 1) surface
000E81 (2009)		Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment
001005 (2008)		The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001018 (2008)		Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
001782 (2005)		Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
001952 (2004)		Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001B30 (2003)		The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001B43 (2003)		Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001C81 (2002-05-13)		Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP
001C99 (2002-02-18)		Sulphur passivation of the InGaAsSb/GaSb photodiodes
001D18 (2002)		The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001E10 (2002)		A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
001E67 (2001-02-15)		Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Passivation" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Passivation" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Passivation
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024