Serveur d'exploration sur l'Indium - Analysis (Chine)

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Optical telecommunication < Optical transition < Optical transmission  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
000320 (2013) Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution
000358 (2012) Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field
000865 (2011) Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects
000C35 (2010) Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic orientations
000D36 (2009) Spectroscopic ellipsometry study of In2O3 thin films
000D82 (2009) PHOTOLUMINESCENCE FROM RARE EARTH IONS DOPED NANOCRYSTALS
000E05 (2009) Mn-AlInN: a new diluted magnetic semiconductor
001078 (2008) Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique
001079 (2008) Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy
001256 (2007) Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well
001337 (2007) Optical, structural, and magnetic properties of p-type InMnP: Zn implanted with the Mn (1 and 10 at.%)
001635 (2006) Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots
001819 (2005) Exciton states and their entanglement in coupled quantum dots
001D78 (2002) Exciton states and interband optical transitions in InGaN quantum dots
001F20 (2001) Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
002062 (2000) Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
002366 (1998) Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
002830 (1993) Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy
002834 (1993) GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors
002859 (1992) Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure
002889 (1992) A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

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