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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Nitrogen compounds »
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Nitrogen additions < Nitrogen compounds < Nitrogen dioxide  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000894 (2011) Efficient Visible Light Driven Photocatalytic Removal of RhB and NO with Low Temperature Synthesized In(OH)xSy Hollow Nanocubes: A Comparative Study
001865 (2005) A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001881 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
001899 (2004-04) Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
001900 (2004-04) InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
001901 (2004-04) InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
001917 (2004-02-15) Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
001A78 (2003-09) Capacitance Characteristics in InN Thin Films Grown by Reactive Sputtering on GaAs
001B11 (2003-02-15) Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off
001C56 (2002-11-15) Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
001C61 (2002-10-01) Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells
001C64 (2002-09) Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation
001C73 (2002-08) Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
001E32 (2001-09-15) Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well
001E51 (2001-05-15) Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
001E54 (2001-04-30) GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
001F86 (2000-12-04) Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures
002002 (2000-09-15) Ellipsometric Study of the Optical Properties of InGaAsN Layers
002041 (2000-01-03) Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with Piezoelectric Fields
002168 (1999-09-15) A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
002201 (1999-02) Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy

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