Multiple layer < Multiple quantum well < Multiple reflections

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List of bibliographic references

Number of relevant bibliographic references: 121.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000073 (2013)		Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000161 (2013)		Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000165 (2013)		Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
000225 (2013)		Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000257 (2013)		Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks
000304 (2013)		Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures
000543 (2012)		Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000581 (2012)		Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000718 (2011)		Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000806 (2011)		Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD
000823 (2011)		Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000827 (2011)		Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
000896 (2011)		Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
000948 (2011)		An investigation on IXxGa1-xN/GaN multiple quantum well solar cells
000982 (2010)		Tunable the emission wavelength of InGaN/GaN multi-quantum wells employing strain-accommodative structures
000A80 (2010)		Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers
000B38 (2010)		High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application
000B55 (2010)		Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates
000B66 (2010)		Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
000C82 (2009)		The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000D42 (2009)		Simulation of a 1550 nm InGaAsP-InP transistor laser

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