Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Measuring methods »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Measuring instrument < Measuring methods < Measuring system  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
000404 (2012) Structural features of melts in the In-Bi system
000902 (2011) Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes
000B57 (2010) Fabrication and characterization of metamaterials at optical frequencies
000D74 (2009) Photoelectric characteristics of organic light-emitting device based on a small molecular fluorene derivative
000F29 (2009) Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals
001209 (2008) Compare and Research of Spectral Response Characteristic of Transmission-Mode GaAs Photocathode before and after Indium Seal
001C45 (2003) Accurate interband-energy measurements from Ellipsometric spectra
001D09 (2002-01-14) Selective growth of single InAs quantum dots using strain engineering
001D99 (2002) Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry
001E67 (2001-02-15) Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
002030 (2000-03) Improved time-of-flight technique for measuring carrier mobility in thin films of organic electroluminescent materials
002032 (2000-02-21) Accurate determination of quasi-Fermi-level separation of semiconductor lasers
002033 (2000-02-21) Accurate determination of quasi-Fermi-level separation of semiconductor lasers
002161 (1999-11) Strain effect on the band structure of InAs/GaAs quantum dots
002166 (1999-10) Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition
002208 (1999-01) Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates
002225 (1999) Temperature and time dependence of the density of molten indium antimonide measured by an improved Archimedean method
002261 (1999) Measurement of diffusivity in molten films by a masking film method
002447 (1997-09-08) Single-layer organic electroluminescent devices by vapor deposition polymerization
002576 (1996-02-15) A proposal for determination of band offset at a semiconductor heterojunction
002645 (1995-08-15) Importance of poly(N-vinylcarbazole) dopant to poly(3-octylthiophene) electroluminescence

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Measuring methods" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Measuring methods" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Measuring methods
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024