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Serveur d'exploration sur l'Indium - Analysis (Chine)

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MOCVD < MOCVD coatings < MOM structure  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
001A52 (2003-12-29) Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
001A60 (2003-11-10) Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
001A65 (2003-10-27) Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
001C68 (2002-08-15) Degree of ordering in Al0.5In0.5P by Raman scattering
001C87 (2002-05) 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
001C96 (2002-03-18) Real index-guided InGaAlP red lasers with buried tunnel junctions
001D05 (2002-02-01) Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
001E26 (2001-10-29) Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency
001E28 (2001-09-17) Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
001E49 (2001-05-15) Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures
001F91 (2000-11-06) Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
002016 (2000-05-29) Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
002156 (1999-11-29) Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002162 (1999-11) Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition
002180 (1999-07-12) AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology
002194 (1999-03-08) The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures
002204 (1999-01-11) Majority- and minority-carrier traps in Te-doped AlInP

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