Interface state < Interface states < Interface structure

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List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]

Ident.	Authors (with country if any)	Title
001931 (2004)		The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction
001A55 (2003-12-15)		Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001A78 (2003-09)		Capacitance Characteristics in InN Thin Films Grown by Reactive Sputtering on GaAs
001A90 (2003-06-16)		Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
001C57 (2002-10-15)		Localized and quantum-well state excitons in AlInGaN laser-diode structure
001C58 (2002-10-15)		Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
001C66 (2002-08-15)		Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
001C75 (2002-07-15)		Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells
001C79 (2002-06-10)		Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
001C96 (2002-03-18)		Real index-guided InGaAlP red lasers with buried tunnel junctions
001E16 (2001-12-15)		Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
001E23 (2001-11-01)		Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
001E29 (2001-09-17)		Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E33 (2001-09-15)		Gamma-Ray Induced Deep Electron Traps in GaInP
001E37 (2001-08-27)		Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
001F95 (2000-10-15)		Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002000 (2000-09-15)		Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
002010 (2000-06-19)		Mechanism of luminescence in InGaN/GaN multiple quantum wells
002017 (2000-05-22)		In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002020 (2000-05-08)		Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy
002026 (2000-03-15)		Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire

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