Inorganic anion < Inorganic compound < Inorganic compounds

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List of bibliographic references

Number of relevant bibliographic references: 100.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000684 (2011)		Temperature-dependent linear or nonlinear gas sensing characteristics of In2O3 mixed α-Fe2O3 nanorods with high sensitivity
000877 (2011)		Electrodeposition-based controllable construction of film of nano-roughened, hierarchical Au microstructures on indium tin oxide (ITO) surface and its application towards the catalytic oxidation of H2O2
000B84 (2010)		Electrochemical deposition of gold-platinum alloy nanoparticles on an indium tin oxide electrode and their electrocatalytic applications
000F59 (2009)		Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder
001512 (2006)		Theoretical study of phase separation in wurtzite InGaN
001557 (2006)		Role of deep traps in carrier generation and transport in differently doped InP wafers
001644 (2006)		Electron irradiation-induced defects in InP pre-annealed at high temperature
001B75 (2003)		Multifunctional organic-inorganic multilayer films of tris(2,2'-bipyridine)ruthenium and decatungstate
002061 (2000)		Surface renewable graphite organosilicate composite electrode containing indium(III) hexacyanoferrate(II/III)
002534 (1997)		All inorganic oxide solid-state thin-film electrochromic devices with variable reflectance
002807 (1993)		X-ray photoelectron spectroscopy studies of CdIn2O4 films
002811 (1993)		Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering
002815 (1993)		Temperature dependence of deep-level photoluminescence in Ga0.5In0.5P epilayers grown by metal-organic chemical vapour deposition
002825 (1993)		Optical properties of a chemically durable phosphate glass
002827 (1993)		Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes
002830 (1993)		Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy
002831 (1993)		Interaction in a chemisorption system of the submonolayer Cs on the InP(110) substrate
002834 (1993)		GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors
002836 (1993)		Field effect on thermal emission from the 0.40 eV electron level in InGaP
002838 (1993)		Correlation between deep-level photoluminescence and ordered structure in Ga0.5In0.5OP epilayers
002843 (1993)		A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface

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