Indium nitride < Indium nitrides < Indium oxide

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List of bibliographic references

Number of relevant bibliographic references: 105.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
001262 (2007)		The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001264 (2007)		The influence of internal electric fields on the transition energy of InGaN/GaN quantum well
001265 (2007)		The high mobility InN film grown by MOCVD with GaN buffer layer
001266 (2007)		The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
001267 (2007)		The growth and field electron emission of InGaN nanowires
001299 (2007)		Structural properties of oxygen on InN(0001) surface
001300 (2007)		Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001301 (2007)		Structural and optical properties of wurtzite InN grown on Si(111)
001304 (2007)		Spin-orbit splitting-dependent quadratic electro-optic effect in InGaN/GaN quantum wells
001315 (2007)		Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
001316 (2007)		Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy
001334 (2007)		Parameters-dependent third-order nonlinear optical susceptibility for quadratic electro-optic effect in GaN/InGaN multiple quantum wells
001345 (2007)		Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001365 (2007)		Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
001370 (2007)		Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001410 (2007)		Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
001420 (2007)		Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001421 (2007)		Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy
001440 (2007)		Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001464 (2007)		Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method
001468 (2007)		Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TGA:Ce3+ phosphors

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