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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Impurity site < Impurity states < Impurity trapping  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000297 (2013) Density functional theory study the effects of point defects in β-In2S3
000499 (2012) In assisted realization of p-type C-doped ZnO: A first-principles study
000661 (2011) Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy
000B18 (2010) Infrared luminescence of Tm3+-doped chalcohalide glasses in GeS2-In2S3-CsBr system
000B32 (2010) Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
000C06 (2010) Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect
001125 (2008) Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot
001126 (2008) Hydrogenic impurity states in zinc-blende InGaN quantum dot
001218 (2008) Built-in electric field effect on the hydrogenic donor impurity in wurtzite InGaN quantum dot
002016 (2000-05-29) Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
002164 (1999-10-18) Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells
002174 (1999-08-15) A dopant-related defect in Te-doped AlInP
002204 (1999-01-11) Majority- and minority-carrier traps in Te-doped AlInP
002296 (1998-11-15) Positron-lifetime study of compensation defects in undoped semi-insulating InP
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
002333 (1998-03-23) Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
002765 (1994-05) Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing
002860 (1992) Oxygen in InxGa1-xAsyP1-y Grown on GaAs

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