High electron mobility transistor < High electron mobility transistors < High energy

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List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
001887 (2004-05-03)		Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
001B01 (2003-05)		Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage
001C86 (2002-05)		Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
001C88 (2002-04-29)		Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
001D08 (2002-01-15)		Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application
001E13 (2001-12-15)		Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
001E20 (2001-12)		Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors
001E29 (2001-09-17)		Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27)		Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
001E75 (2001-01-15)		An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
001E84 (2001)		The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
001F14 (2001)		Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
001F94 (2000-11)		Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
001F96 (2000-10-15)		High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
002006 (2000-07-15)		Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation
002028 (2000-03-06)		Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor
002093 (2000)		InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
002150 (1999-12-01)		Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01)		Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002156 (1999-11-29)		Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002169 (1999-09-13)		High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

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