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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Gallium Indium Arsenides Mixed < Gallium Indium Arsenides phosphides Mixed < Gallium Indium Nitrides Mixed  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000A06 (2010) Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well
002828 (1993) Miniature InGaAsP/InP phase modulator for integrated opto-electronics
002830 (1993) Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy
002850 (1992) The InxGa1-xAsy(0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy
002898 (1991) Study of a InGaAsP phase modulator
002926 (1990) Mode-selection characteristic of the symmetrical three-section composite-cavity InGaAsP/InP semiconductor laser
002930 (1990) Hemispherical resonator study for surface-emitting InGaAsP/InP lasers
002934 (1990) Calculations of optical constants for GaxIn1-xPyAs1-y alloys lattice-matched to InP
002940 (1989) The density of states and dielectric constant of monolayer superlattice Ga0.47In0.53As/InP(110)
002946 (1989) Influence of mass-transported layers on threshold current and mode behavior in InGaAsP BH semiconductor lasers
002964 (1987) Open tube Zn diffusion using In/Zn sources and its application in quasi-planar InP/InGaAsP HBT's
002970 (1987) Effects of energyband structure on the optical gain spectra of InGaAsP quaternary semiconductor
002971 (1987) Effect of carrier leakage through the heterobarrier on the T0 of InGaAsP semiconductor lasers
002990 (1984) Studies on the physical properties of oxidized films/InGaAsP

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