Fenton reaction < Fermi level < Fermi liquid

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 36.
[0-20] [0 - 20][0 - 36][20-35][20-40]

Ident.	Authors (with country if any)	Title
000035 (2014)		Effect of Ni and Sn doping on the half-metallicity of full Heusler Ti2CoIn alloy
000074 (2013)		The structural, elastic and thermoelectric properties of Fe2VAl at pressures
000076 (2013)		The electronic and optical properties of indium doped zinc oxide nanosheets
000084 (2013)		Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors
000292 (2013)		Dopant-induced band filling and bandgap renormalization in CdO: In films
000310 (2013)		Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films
000484 (2012)		Interplay of cleaning and de-doping in oxygen plasma treated high work function indium tin oxide (ITO)
000620 (2012)		Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device
000B70 (2010)		Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection
000D21 (2009)		Study on temperature dependent resistivity of indium-doped cadmium zinc telluride
000E83 (2009)		Energy band calculation of amorphous indium tin oxide films on polyethylene terephthalate substrate with indirect transition
001003 (2008)		The effect of electrical properties for InGaN and InN by high-energy particle irradiation
001162 (2008)		Electronic structure and magnetic state of InCNi3
001A76 (2003-09-01)		Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction
001A90 (2003-06-16)		Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
001E13 (2001-12-15)		Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
002032 (2000-02-21)		Accurate determination of quasi-Fermi-level separation of semiconductor lasers
002033 (2000-02-21)		Accurate determination of quasi-Fermi-level separation of semiconductor lasers
002165 (1999-10-01)		Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment
002175 (1999-08-01)		Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance
002176 (1999-08-01)		Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices

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