Fabrication < Fabrication property relation < Fabrication structure relation

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List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000581 (2012)		Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000598 (2012)		Controlled synthesis of luminescent CuInS2 nanocrystals and their optical properties
000652 (2011)		Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films
000678 (2011)		The effect of compression on electron transport and recombination in plastic Ti02 photoanodes
000B33 (2010)		Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment
000C52 (2010)		1.3 μm InAs/GaAs quantum dots with broad emission spectra
000F41 (2009)		Characteristics of ZnO:In thin films prepared by RF magnetron sputtering
001570 (2006)		Photoluminescence of ZnO thin films on Si substrate with and without ITO buffer layer
001676 (2006)		Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films
001848 (2005)		Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE
001B29 (2003)		The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001B76 (2003)		Microstructure and mechanical properties of small amounts of In2O3 reinforced Pb(ZrxTi1-x)O3 ceramics
001B89 (2003)		InGaN/GaN MQW high brightness LED grown by MOCVD
001B98 (2003)		Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD
001B99 (2003)		Growth of nanoscale InGaN self-assembled quantum dots
001C12 (2003)		Epitaxial growth of high-quality ZnSSe on ZnSSe/In/glass substrate
001C17 (2003)		Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003)		Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
001C23 (2003)		Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
001D22 (2002)		The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs
001D85 (2002)		Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

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