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Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000015 (2014) Performance improvement of oxide thin-film transistors with a two-step-annealing method
000074 (2013) The structural, elastic and thermoelectric properties of Fe2VAl at pressures
000076 (2013) The electronic and optical properties of indium doped zinc oxide nanosheets
000426 (2012) Relationship between the short-range order and electrical resistivity in liquid indium-antimony
000463 (2012) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
000614 (2012) Band-Edge Electronic Structure of β-In2S3: The Role of s or p Orbitals of Atoms at Different Lattice Positions
000C99 (2009) Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16
000E88 (2009) Electronic structure and optical properties of In doped SrTiO3/MgO(001)
000F48 (2009) Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells
001481 (2007) Atomistic approach to thickness-dependent bandstructure calculation of InSb UTB
001F69 (2001) Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
002427 (1998) Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers
002900 (1991) Structural stability and electronic density of states in (001)- and (111)-oriented (GAP)1/(InP)1 strained-layer superlattices
002905 (1991) Localized states induced by self-interstitial defects in ultra-thin GaP/InP strained-layer superlattices
002910 (1991) Electronic structure in a Si-doped (GAP)1/(INP)1 strained-layer superlattice
002911 (1991) Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice : bulk and surface
002934 (1990) Calculations of optical constants for GaxIn1-xPyAs1-y alloys lattice-matched to InP
002940 (1989) The density of states and dielectric constant of monolayer superlattice Ga0.47In0.53As/InP(110)
002958 (1988) A simple method for the evaluation of the surface in atom dimerisation and electronic states of the InP(100) surface

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